Datasheet > IRGB14C40LPBF

IRGB14C40LPBF

更新时间： 2024-11-01 04:07:51

品牌	Logo	应用领域
英飞凌 - INFINEON		栅极双极性晶体管
页数	文件大小	规格书
11页	289K
描述
IGBT with on-chip Gate-Emitter and Gate-Collector clamps

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替代型号

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IRGB14C40LPBF 数据手册

PD - 95193A

IRGS14C40LPbF

IRGSL14C40LPbF

IRGB14C40LPbF

Ignition IGBT

IGBT with on-chip Gate-Emitter and Gate-Collector clamps

Features

Most Rugged in Industry

TERMINAL DIAGRAM

Collector

BV_{CES =}370V min, 430V max

I_C@ T_C= 110°C = 14A

Logic-LevelGateDrive

> 6KV ESD Gate Protection

Low Saturation Voltage

V_CE(on)typ= 1.2V @7A @25°C

I_L(min)=11.5A @25°C,L=4.7mH

Gate

High Self-clamped Inductive Switching Energy

Lead-Free

Emitter

Description

JEDEC TO-263AB

JEDEC TO-220AB

JEDEC TO-262AA

The advanced IGBT process family includes a

MOS gated, N-channel logic level device which

is intended for coil-on-plug automotive ignition

applications and small-engine ignition circuits.

Unique features include on-chip active voltage

clamps between the Gate-Emitter and

IRGS14C40L

IRGSL14C40L

IRGB14C40L

Gate-Collector which provide over voltage

protection capability in ignition circuits.

NOTE: IRGS14C40L is available in tape and reel. Add a suffix of

TRR or TRL to the part number to determine the orientation of the

device in the pocket, i.e, IRGS14C40LTRR or IRGS14C40LTRL.

Absolute Maximum Ratings

Parameter

Max

Clamped

Unit

Condition

ohm

V_CES

R_G= 1K

Collector-to-Emitter Voltage

I_C@ T_C= 25°C

_GE= 5V

Continuous Collector Current

Continuous Gate Current

Peak Gate Current

I_C@ T_C= 110°C

I_G

I_Gp

t_PK= 1ms, f = 100Hz

V_GE

Gate-to-Emitter Voltage

Clamped

125

P_D@ T_C= 25°C

Maximum Power Dissipation

Operating Junction and

P_D@ T = 110°C

T_J

- 40 to 175 °C

T_STG

V_ESD

I_L

Storage Temperature Range

Electrostatic Voltage

ohm

C = 100pF, R = 1.5K

L = 4.7mH, T = 25°C

Self-clamped Inductive Switching Current

11.5

Thermal Resistance

Parameter

Min

Typ

Max

1.2

Unit

R_θ_JC

R_θ_JA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

(PCB Mounted, Steady State)

°C/W

Zθ_JC

Transient Thermal Impedance, Juction-to-Case (Fig.11)

www.irf.com

Page 1

11/19/04

12 3 4 5 6 7...11

中文翻译

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IRGB14C40LPBF 替代型号

型号	品牌	替代类型	描述	数据表
ISL9V3040P3	ONSEMI	功能相似	IGBT，400V，17A，1.58V，300mJ，TO-220EcoSPARK® I，N
ISL9V3040P3	FAIRCHILD	功能相似	EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT

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