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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| IRGAC30U | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 17A I(C) | TO-204AE |
|
| IRGAC40F | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 38A I(C) | TO-204AE |
|
| IRGAC40U | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 31A I(C) | TO-204AE |
|
| IRGAC50F | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | TO-204AE |
|
| IRGAC50U | ETC |
获取价格 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 41A I(C) | TO-204AE |
|
| IRGB10B60KD | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
|
| IRGB10B60KDPBF | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
|
| IRGB14C40L | INFINEON |
获取价格 |
IGBT with on-chip Gate-Emitter and Gate-Collector clamps |
|
| IRGB14C40LPBF | INFINEON |
获取价格 |
IGBT with on-chip Gate-Emitter and Gate-Collector clamps |
|
| IRGB15B60KD | INFINEON |
获取价格 |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
|
英伟达新AI芯片Rubin或提前半年亮相
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
三星深化印度制造布局，供应链本地化进程加速
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
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