IRFL110TR

更新时间： 2024-09-28 05:39:31

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	1456K
描述
Power MOSFET

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IRFL110TR 数据手册

IRFL110, SiHFL110

Vishay Siliconix

Power MOSFET

FEATURES

PRODUCT SUMMARY

V_DS(V)

• Surface Mount

100

• Available in Tape and Reel

• Dynamic dV/dt Rating

Available

R_DS(on)(Ω)

V_GS= 10 V

0.54

RoHS*

COMPLIANT

• Repetitive Avalanche Rated

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

Q_g(Max.) (nC)

8.3

2.3

_gs(nC)

_gd(nC)

3.8

Configuration

Single

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The SOT-223 package is designed for surface-mounting

using vapor phase, infrared, or wave soldering techniques.

Its unique package design allows for easy automatic

pick-and-place as with other SOT or SOIC packages but has

the added advantage of improved thermal performance due

to an enlarged tab for heatsinking. Power dissipation of

greater than 1.25 W is possible in a typical surface mount

application.

SOT-223

N-Channel MOSFET

ORDERING INFORMATION

Package

SOT-223

IRFL110PbF

SiHFL110-E3

IRFL110

IRFL110TRPbF^a

SiHFL110T-E3^a

IRFL110TR^a

SiHFL110T^a

Lead (Pb)-free

SnPb

SiHFL110

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

SYMBOL

LIMIT

100

UNIT

V_DS

V_GS

_C= 25 °C

1.5

Continuous Drain Current

_GSat 10 V

I_D

T_C=100°C

0.96

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.025

0.017

150

W/°C

Linear Derating Factor (PCB Mount)^e

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

E_AS

I_AR

1.5

Repetitive Avalanche Energy^a

E_AR

0.31

3.1

Maximum Power Dissipation

Maximum Power Dissipation (PCB Mount)^e

Peak Diode Recovery dV/dt^c

T_C= 25 °C

P_D

V/ns

°C

T_A= 25 °C

2.0

dV/dt

5.5

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

T_J, T_stg

- 55 to + 150

300^d

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 25 V, starting T_J= 25 °C, L = 25 mH, R_G= 25 Ω, I_AS= 3.0 A (see fig. 12).

c. I_SD≤ 5.6 A, dI/dt ≤ 75 A/µs, V_DD≤ V_DS, T_J≤ 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91192

S-81361-Rev. A, 07-Jul-08

www.vishay.com

12 3 4 5 6 7 8

中文翻译

下载PDF

IRFL110TR 替代型号

型号	品牌	替代类型	描述	数据表
IRFL110PBF	VISHAY	完全替代	Power MOSFET
IRFL110TRPBF	VISHAY	完全替代	Power MOSFET
IRFL110	VISHAY	类似代替	Power MOSFET

与IRFL110TR相关器件

型号	品牌	获取价格	描述	数据表
IRFL110TRPBF	VISHAY	获取价格	Power MOSFET
IRFL210	VISHAY	获取价格	Power MOSFET
IRFL210	INFINEON	获取价格	Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.96A)
IRFL210, SiHFL210	VISHAY	获取价格	Power MOSFET
IRFL210PBF	VISHAY	获取价格	Power MOSFET
IRFL210PBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRFL210TR	VISHAY	获取价格	Power MOSFET
IRFL210TRPBF	VISHAY	获取价格	Power MOSFET
IRFL214	INFINEON	获取价格	Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=0.79A)
IRFL214	VISHAY	获取价格	Power MOSFET

与IRFL110TR相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

24
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

21
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

20
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

32

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFL110TR

IRFL110TR 数据手册

IRFL110TR 替代型号

与IRFL110TR相关器件

与IRFL110TR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFL110TR

IRFL110TR 数据手册

IRFL110TR 替代型号

与IRFL110TR相关器件

与IRFL110TR相关文章

您还可以找

您在本页遇到什么问题？