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IRFL210TRPBF PDF预览

IRFL210TRPBF

更新时间: 2024-11-16 05:39:31
品牌 Logo 应用领域
威世 - VISHAY 晶体晶体管开关脉冲光电二极管局域网
页数 文件大小 规格书
8页 1069K
描述
Power MOSFET

IRFL210TRPBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-261AA
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.75Factory Lead Time:6 weeks
风险等级:0.71其他特性:AVALANCHE RATED
雪崩能效等级(Eas):50 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:200 V
最大漏极电流 (Abs) (ID):0.96 A最大漏极电流 (ID):0.96 A
最大漏源导通电阻:1.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-261AAJESD-30 代码:R-PDSO-G4
湿度敏感等级:1元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):3.1 W最大脉冲漏极电流 (IDM):7.7 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRFL210TRPBF 数据手册

 浏览型号IRFL210TRPBF的Datasheet PDF文件第2页浏览型号IRFL210TRPBF的Datasheet PDF文件第3页浏览型号IRFL210TRPBF的Datasheet PDF文件第4页浏览型号IRFL210TRPBF的Datasheet PDF文件第5页浏览型号IRFL210TRPBF的Datasheet PDF文件第6页浏览型号IRFL210TRPBF的Datasheet PDF文件第7页 
IRFL210, SiHFL210  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Surface Mount  
PRODUCT SUMMARY  
VDS (V)  
200  
Available  
• Available in Tape and Reel  
• Dynamic dV/dt Rating  
R
DS(on) (Ω)  
VGS = 10 V  
1.5  
RoHS*  
Qg (Max.) (nC)  
8.2  
1.8  
COMPLIANT  
• Repetitive Avalanche Rated  
• Fast Switching  
Q
Q
gs (nC)  
gd (nC)  
4.5  
Configuration  
Single  
• Ease of Paralleling  
D
• Simple Drive Requirements  
• Lead (Pb)-free Available  
SOT-223  
DESCRIPTION  
G
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
S
The SOT-223 package is designed for surface-mounting  
using vapor phase, infrared, or wave soldering techniques.  
Its unique package design allows for easy automatic  
pick-and-place as with other SOT or SOIC packages but has  
the added advantage of improved thermal performace due to  
an enlarged tab for heatsinking. Power dissipation of greater  
than 1.25 W is possible in a typical surface mount  
application.  
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
SOT-223  
SOT-223  
IRFL210PbF  
SiHFL210-E3  
IRFL210  
IRFL210TRPbFa  
SiHFL210T-E3a  
IRFL210TRa  
SiHFL210Ta  
Lead (Pb)-free  
SnPb  
SiHFL210  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
200  
20  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
TC = 25 °C  
TC =100°C  
0.96  
0.6  
Continuous Drain Current  
VGS at 10 V  
ID  
A
Pulsed Drain Currenta  
IDM  
7.7  
Linear Derating Factor  
0.025  
0.017  
50  
W/°C  
Linear Derating Factor (PCB Mount)e  
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
mJ  
A
0.96  
0.31  
EAR  
mJ  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91193  
S-81377-Rev. A, 30-Jun-08  
www.vishay.com  
1

IRFL210TRPBF 替代型号

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