IRFL4105

更新时间： 2024-11-15 22:51:39

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	170K
描述
Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=3.7A)

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

IRFL4105 数据手册

PD- 91381A

IRFL4105

HEXFET^®Power MOSFET

l Surface Mount

l Advanced Process Technology

l Ultra Low On-Resistance

l Dynamic dv/dt Rating

l Fast Switching

V_DSS= 55V

R_DS(on)= 0.045Ω

I_D= 3.7A

l Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

knownfor, providesthedesignerwithanextremelyefficient

and reliable device for use in a wide variety of applications.

The SOT-223 package is designed for surface-mount

using vapor phase, infra red, or wave soldering techniques.

Its unique package design allows for easy automatic pick-

and-place as with other SOT or SOIC packages but has the

added advantage of improved thermal performance due to

an enlarged tab for heatsinking. Power dissipation of 1.0W

is possible in a typical surface mount application.

SO T -223

Absolute Maximum Ratings

Parameter

Max.

5.2

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V**

Continuous Drain Current, V_GS@ 10V*

Pulsed Drain Current

3.7

3.0

P_D@T_A= 25°C

Power Dissipation (PCB Mount)**

Power Dissipation (PCB Mount)*

Linear Derating Factor (PCB Mount)*

Gate-to-Source Voltage

2.1

1.0

8.3

mW/°C

V_GS

± 20

110

E_AS

Single Pulse Avalanche Energy

Avalanche Current

I_AR

3.7

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

0.10

5.0

V/ns

°C

dv/dt

T_J,T_STG

-55 to + 150

Thermal Resistance

Parameter

Typ.

Max.

Units

R_θJA

Junction-to-Amb. (PCB Mount, steady state)*

120

°C/W

Junction-to-Amb. (PCB Mount, steady state)**

* When mounted on FR-4 board using minimum recommended footprint.

** When mounted on 1 inch square copper board, for comparison with other SMD devices.

www.irf.com

1/14/99

12 3 4 5 6 7...9

中文翻译

下载PDF

IRFL4105 替代型号

型号	品牌	替代类型	描述	数据表
IRFL4105TR	INFINEON	类似代替	暂无描述
IRFL4105TRPBF	INFINEON	功能相似	Power Field-Effect Transistor, 3.7A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
IRFL4105PBF	INFINEON	功能相似	HEXFET㈢ Power MOSFET

与IRFL4105相关器件

型号	品牌	获取价格	描述	数据表
IRFL4105PBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRFL4105TR	INFINEON	获取价格	暂无描述
IRFL4105TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 3.7A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
IRFL4310	INFINEON	获取价格	Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=1.6A)
IRFL4310PBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET ( VDSS = 100V , RDS(on)
IRFL4310TRPBF	INFINEON	获取价格	HEXFETÂ® Power MOSFET
IRFL4315	INFINEON	获取价格	SMPS MOSFET
IRFL4315PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFL4315TR	INFINEON	获取价格	Power Field-Effect Transistor, 2.6A I(D), 150V, 0.185ohm, 1-Element, N-Channel, Silicon, M
IRFL4315TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 2.6A I(D), 150V, 0.185ohm, 1-Element, N-Channel, Silicon, M

与IRFL4105相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

13
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

7
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

35
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

31

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFL4105

IRFL4105 数据手册

IRFL4105 替代型号

与IRFL4105相关器件

与IRFL4105相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFL4105

IRFL4105 数据手册

IRFL4105 替代型号

与IRFL4105相关器件

与IRFL4105相关文章

您还可以找

您在本页遇到什么问题？