Datasheet > IRFL9110, SiHFL9110

IRFL9110, SiHFL9110

更新时间： 2023-12-06 20:09:06

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	352K
描述
Power MOSFET

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数据手册

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IRFL9110, SiHFL9110

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Surface-mount

• Available in tape and reel

• Dynamic dv/dt rating

• Repetitive avalanche rated

• P-channel

SOT-223

Available

• Fast switching

• Ease of paralleling

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

P-Channel MOSFET

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

Marking code: FF

PRODUCT SUMMARY

V_DS(V)

The SOT-223 package is designed for surface-mount using

vapor phase, infrared, or wave soldering techniques. Its

unique package design allows for easy automatic

pick-and-place as with other SOT or SOIC packages but

has the added advantage of improved thermal performance

due to an enlarged tab for heatsinking. Power dissipation of

greater than 1.25 W is possible in a typical surface mount

application.

-100

R_DS(on)()

V_GS= -10 V

1.2

Q_gmax. (nC)

8.7

2.2

4.1

_gs(nC)

_gd(nC)

Configuration

Single

ORDERING INFORMATION

Package

SOT-223

SiHFL9110TR-GE3 ^a

IRFL9110TRPbF-BE3 ^{a, b}

IRFL9110TRPbF ^a

Lead (Pb)-free and halogen-free

Lead (Pb)-free

Notes

a. See device orientation

b. “-BE3” denotes alternate manufacturing location

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

-100

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

-1.1

Continuous drain current

V_GSat -10 V

I_D

T_C= 100 °C

-0.69

-8.8

Pulsed drain current ^a

I_DM

Linear derating factor

0.025

0.017

100

W/°C

Linear derating factor (PCB mount) ^e

Single pulse avalanche energy ^b

Avalanche current ^a

E_AS

I_AR

-1.1

Repetitive avalanche energy ^a

E_AR

0.31

Maximum power dissipation

_C= 25 °C

3.1

P_D

V/ns

°C

Maximum power dissipation (PCB mount) ^e

Peak diode recovery dv/dt ^c

T_A= 25 °C

2.0

dv/dt

-5.5

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^d

T_J, T_stg

-55 to +150

300

For 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. V_DD= -25 V, starting T_J= 25 °C, L = 7.7 mH, R_g= 25 , I_AS= -4.4 A (see fig. 12)

c. I_SD -4.4 A, di/dt  -75 A/μs, V_DD V_DS, T_J 150 °C

d. 1.6 mm from case

e. When mounted on 1" square PCB (FR-4 or G-10 material)

S21-0322-Rev. G, 05-Apr-2021

Document Number: 91196

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与IRFL9110, SiHFL9110相关器件

型号	品牌	获取价格	描述	数据表
IRFL9110PBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET ( VDSS = -100V , RDS(on)
IRFL9110PBF	VISHAY	获取价格	Power MOSFET
IRFL9110TR	VISHAY	获取价格	Power MOSFET
IRFL9110TRPBF	VISHAY	获取价格	Power MOSFET
IRFL9110TRPBF	INFINEON	获取价格	Small Signal Field-Effect Transistor, 1.1A I(D), 100V, 1-Element, N-Channel, Silicon, Meta
IRFM	SEME-LAB	获取价格	N-CHANNEL POWER MOSFET
IRFM010	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 50V V(BR)DSS \| 2.7A I(D) \| SOT-223
IRFM014	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 2.7A I(D) \| SOT-223
IRFM014A	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 2.8A I(D) \| SOT-223
IRFM014AD84Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.8A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Met

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