Datasheet > IRFL9014TR

IRFL9014TR

更新时间： 2024-05-23 22:23:39

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	490K
描述
种类:P-Channel;漏源电压（Vdss）:-60V;持续漏极电流（Id）（在25°C时）:-8A;Vgs(th)(V):±20;漏源导通电阻:62mΩ@-10V

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IRFL9014TR 数据手册

IRFL9014

UMW

-60V P-Channel MOSFET

Description

The SOT-223 package is designed for surface-mounting

using vapor phase, infrared, or wave soldering techniques.

Its unique package design allows for easy automatic pick-

and-place as with other SOT or SOP packages but has the

added advantage of improved thermal performance due to

an enlarged tab for heatsinking. Power dissipation of

greater than 1.25 W is possible in a typical surface mount

application.

Features

V_DS(V) = -60V

•

I_D= -8A (V_GS= -10V)

•

R_DS(ON)

•

< 62mΩ (V_GS= -10V)

P-Channel MOSFET

(T = 25 °C, unless otherwise noted)

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_DS

LIMIT

-60

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_GS

-8

Continuous Drain Current

V_GSat - 10 V

I_D

T_C= 25 °C

Pulsed Drain Current ^a

I_DM

-14

0.025

0.017

140

Linear Derating Factor

W/°C

Linear Derating Factor (PCB Mount) ^e

Single Pulse Avalanche Energy ^b

Repetitive Avalanche Current ^a

E_AS

I_AR

-1.8

Repetitive Avalanche Energy ^a

E_AR

0.31

Maximum Power Dissipation

_C= 25 °C

3.1

P_D

V/ns

°C

Maximum Power Dissipation (PCB Mount) ^e

Peak Diode Recovery dV/dt ^c

T_A= 25 °C

2.0

dV/dt

-4.5

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature) ^d

T_J, T_stg

-55 to +150

300

for 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= - 25 V, starting T_J= 25 °C, L = 50 mH, R_g= 25 , I_AS= - 1.8 A (see fig. 12).

c. I_SD - 6.7 A, dI/dt  90 A/μs, V_DD V_DS, T_J 150 °C.

d. 1.6 mm from case.

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7

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