Datasheet > IRFL4310

IRFL4310

更新时间： 2024-09-12 22:51:39

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管开关光电二极管
页数	文件大小	规格书
9页	313K
描述
Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=1.6A)

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替代型号

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IRFL4310 数据手册

PD - 91368B

IRFL4310

HEXFET^®Power MOSFET

V_DSS= 100V

R_DS(on)= 0.20W

I_D= 1.6A

l Surface Mount

l Dynamic dv/dt Rating

l Fast Switching

l Ease of Paralleling

l Advanced Process Technology

l Ultra Low On-Resistance

Description

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve

extremely low on-resistance per silicon area. This benefit,

combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well

knownfor, providesthedesignerwithanextremelyefficient

and reliable device for use in a wide variety of applications.

The SOT-223 package is designed for surface-mount

usingvaporphase, infrared, orwavesolderingtechniques.

Its unique package design allows for easy automatic pick-

and-place as with other SOT or SOIC packages but has

the added advantage of improved thermal performance

due to an enlarged tab for heatsinking. Power dissipation

of 1.0W is possible in a typical surface mount application.

SOT-223

Absolute Maximum Ratings

Parameter

Max.

2.2

1.6

1.3

Units

I_D@ T_A= 25°C

I_D@ T_A= 70°C

I_DM

Continuous Drain Current, V_GS@ 10V**

Continuous Drain Current, V_GS@ 10V*

Pulsed Drain Current

P_D@T_A= 25°C

Power Dissipation (PCB Mount)**

Power Dissipation (PCB Mount)*

Linear Derating Factor (PCB Mount)*

Gate-to-Source Voltage

2.1

1.0

8.3

± 20

mW/°C

V_GS

E_AS

Single Pulse Avalanche Energy

Avalanche Current

I_AR

1.6

E_AR

Repetitive Avalanche Energy*

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

0.10

5.0

V/ns

°C

dv/dt

T_J,T_STG

-55 to + 150

Thermal Resistance

Parameter

Junction-to-Amb. (PCB Mount, steady state)*

Typ.

Max.

120

Units

R_qJA

°C/W

Junction-to-Amb. (PCB Mount, steady state)**

* When mounted on FR-4 board using minimum recommended footprint.

** When mounted on 1 inch square copper board, for comparison with other SMD devices.

www.irf.com

5/11/99

12 3 4 5 6 7...9

中文翻译

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IRFL4310 替代型号

型号	品牌	替代类型	描述	数据表
BSP372L6327	INFINEON	类似代替	Power Field-Effect Transistor, 1.7A I(D), 100V, 0.31ohm, 1-Element, N-Channel, Silicon, Me
BSP372	INFINEON	类似代替	SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level Avalanche rated
IRFL4310TRPBF	INFINEON	功能相似	HEXFETÂ® Power MOSFET

与IRFL4310相关器件

型号	品牌	获取价格	描述	数据表
IRFL4310PBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET ( VDSS = 100V , RDS(on)
IRFL4310TRPBF	INFINEON	获取价格	HEXFETÂ® Power MOSFET
IRFL4315	INFINEON	获取价格	SMPS MOSFET
IRFL4315PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFL4315TR	INFINEON	获取价格	Power Field-Effect Transistor, 2.6A I(D), 150V, 0.185ohm, 1-Element, N-Channel, Silicon, M
IRFL4315TRPBF	INFINEON	获取价格	Power Field-Effect Transistor, 2.6A I(D), 150V, 0.185ohm, 1-Element, N-Channel, Silicon, M
IRFL5505	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 55V V(BR)DSS \| 3.4A I(D) \| SOT-223
IRFL640	VISHAY	获取价格	Power MOSFET
IRFL640PBF	VISHAY	获取价格	Power MOSFET
IRFL9014	VISHAY	获取价格	Power MOSFET

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