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IRFL4315PBF PDF预览

IRFL4315PBF

更新时间: 2024-11-16 04:23:23
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 148K
描述
HEXFET Power MOSFET

IRFL4315PBF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LEAD FREE PACKAGE-4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:7.01
Base Number Matches:1

IRFL4315PBF 数据手册

 浏览型号IRFL4315PBF的Datasheet PDF文件第2页浏览型号IRFL4315PBF的Datasheet PDF文件第3页浏览型号IRFL4315PBF的Datasheet PDF文件第4页浏览型号IRFL4315PBF的Datasheet PDF文件第5页浏览型号IRFL4315PBF的Datasheet PDF文件第6页浏览型号IRFL4315PBF的Datasheet PDF文件第7页 
PD - 95258  
IRFL4315PbF  
SMPS MOSFET  
HEXFET® Power MOSFET  
VDSS  
RDS(on) max  
ID  
Applications  
l High frequency DC-DC converters  
l Lead-Free  
150V  
185mW@VGS = 10V 2.6A  
Benefits  
l Low Gate to Drain Charge to Reduce  
Switching Losses  
l Fully Characterized Capacitance Including  
Effective COSS to Simplify Design, (See  
App. Note AN1001)  
l Fully Characterized Avalanche Voltage  
and Current  
SOT-223  
Absolute Maximum Ratings  
Parameter  
Max.  
2.6  
Units  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
2.1  
A
21  
PD @TA = 25°C  
Power Dissipation„  
2.8  
W
W/°C  
V
Linear Derating Factor  
0.02  
VGS  
dv/dt  
TJ  
Gate-to-Source Voltage  
± 30  
Peak Diode Recovery dv/dt †  
Operating Junction and  
6.3  
V/ns  
-55 to + 150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Thermal Resistance  
Symbol  
RθJA  
Parameter  
Junction-to-Ambient (PCB Mount, steady state)„  
Typ.  
–––  
Max.  
45  
Units  
°C/W  
Notes  through †are on page 8  
www.irf.com  
1
05/24/04  

IRFL4315PBF 替代型号

型号 品牌 替代类型 描述 数据表
IRFL4315 INFINEON

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