IRFL214PBF

更新时间： 2024-11-16 04:23:23

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体小信号场效应晶体管开关光电二极管局域网
页数	文件大小	规格书
9页	225K
描述
HEXFET㈢ Power MOSFET

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IRFL214PBF 数据手册

PD-95318

IRFL214PbF

HEXFET^®Power MOSFET

ꢀ Surface Mount

ꢀ Available in Tape & Reel

ꢀ Dynamic dv/dt Rating

ꢀ Repetitive Avalanche Rated

ꢀ Fast Switching

V_DSS= 250V

_DS(on)= 2.0Ω

ꢀ Ease of Paralleling

ꢀ Simple Drive Requirements

ꢀ Lead-Free

I_D= 0.79A

Description

Third Generation HEXFETs from International Rectifier

provide the designer with the best combination of fast

switching, ruggedized device design, low on-resistance

andcost-effectiveness.

TheSOT-223packageisdesignedforsurface-mountusing

vapor phase, infra red, or wave soldering techniques. Its

uniquepackagedesignallowsforeasyautomaticpick-and-

place as with other SOT or SOIC packages but has the

addedadvantageofimprovedthermalperformancedueto

an enlarged tab for heatsinking. Power dissipation of

grreater than 1.25W is possible in a typical surface mount

application.

SOT-223

Absolute Maximum Ratings

Parameter

Max.

0.79

0.50

6.3

Units

I_D@ Tc = 25°C

I_D@ Tc = 100°C

I_DM

Continuous Drain Current, V_GS@ 10 V

Pulsed Drain Current ꢀ

P_D@Tc = 25°C

P_D@T_A= 25°C

PowerDissipation

3.1

Power Dissipation (PCB Mount)**

LinearDeratingFactor

2.0

0.025

0.017

-/+20

Linear Derating Factor (PCB Mount)**

Gate-to-SourceVoltage

W/°C

V_GS

E_AS

Single Pulse Avalanche Energyꢁ

Avalanche Currentꢀ

I_AR

0.79

0.31

4.8

E_AR

Repetitive Avalanche Energyꢀ

Peak Diode Recovery dv/dt ꢂ

Junction and Storage Temperature Range

Soldewring Temperature, for 10 seconds

V/ns

dv/dt

T_J,T_STG

-55 to + 150

300 (1.6mm from case)

°C

Thermal Resistance

Parameter

Junction-to-PCB

Typ.

–––

Max.

Units

R_θJC

R_θJA

°C/W

Junction-to-Ambient.(PCBMount)**

** When mounted on 1'' SQUARE pcb (FR-4 or G-10 Material).

For recommended footprint and soldering techniques refer to application note #AN-994.

www.irf.com

05/26/04

12 3 4 5 6 7...9

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