Datasheet > IRFL214, SiHFL214

IRFL214, SiHFL214

更新时间： 2024-11-17 14:55:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	272K
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Power MOSFET

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IRFL214, SiHFL214

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Surface-mount

• Available in tape and reel

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Fast switching

• Ease of paralleling

• Simple drive requirements

SOT-223

Available

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

Marking code: FD

PRODUCT SUMMARY

The SOT-223 package is designed for surface-mounting

using vapor phase, infrared, or wave soldering techniques.

Its unique package design allows for easy automatic

pick-and-place as with other SOT or SOIC packages but

has the added advantage of improved thermal performance

due to an enlarged tab for heatsinking. Power dissipation of

greater than 1.25 W is possible in a typical surface mount

application.

V_DS(V)

250

R_DS(on)()

V_GS= 10 V

2.0

Q_g(Max.) (nC)

8.2

1.8

_gs(nC)

_gd(nC)

4.5

Configuration

Single

ORDERING INFORMATION

Package

SOT-223

SiHFL214TR-GE3 ^a

IRFL214TRPbF-BE3 ^{a, b}

IRFL214TRPbF ^a

Lead (Pb)-free and halogen-free

Lead (Pb)-free

Notes

a. See device orientation

b. “-BE3” denotes alternate manufacturing location

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

250

UNIT

Drain-source voltage

Gate-source voltage

V_DS

V_GS

_C= 25 °C

0.79

0.50

6.3

Continuous drain current

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed drain current ^a

I_DM

Linear derating factor

0.025

0.017

W/°C

Linear derating factor (PCB mount) ^e

Single pulse avalanche energy ^b

Avalanche current ^a

E_AS

I_AR

0.79

0.31

3.1

Repetitive avalanche energy ^a

E_AR

Maximum power dissipation

T_C= 25 °C

P_D

V/ns

°C

Maximum power dissipation (PCB mount) ^e

Peak diode recovery dv/dt ^c

T_A= 25 °C

2.0

dV/dt

4.8

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^d

T_J, T_stg

-55 to +150

300

For 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. V_DD= 50 V, starting T_J= 25 °C, L = 128 mH, R_g= 25 , I_AS= 0.79 A (see fig. 12)

c. I_SD 2.7 A, dI/dt  65 A/μs, V_DD V_DS, T_J 150 °C

d. 1.6 mm from case

e. When mounted on 1" square PCB (FR-4 or G-10 material)

S21-0322-Rev. F, 05-Apr-2021

Document Number: 91194

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7 8

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与IRFL214, SiHFL214相关器件

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