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IRFL214, SiHFL214 PDF预览

IRFL214, SiHFL214

更新时间: 2024-11-17 14:55:35
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 272K
描述
Power MOSFET

IRFL214, SiHFL214 数据手册

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IRFL214, SiHFL214  
www.vishay.com  
Vishay Siliconix  
Power MOSFET  
FEATURES  
D
• Surface-mount  
• Available in tape and reel  
• Dynamic dV/dt rating  
• Repetitive avalanche rated  
• Fast switching  
• Ease of paralleling  
• Simple drive requirements  
SOT-223  
G
D
Available  
S
D
G
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
S
N-Channel MOSFET  
DESCRIPTION  
Third generation power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
Marking code: FD  
PRODUCT SUMMARY  
The SOT-223 package is designed for surface-mounting  
using vapor phase, infrared, or wave soldering techniques.  
Its unique package design allows for easy automatic  
pick-and-place as with other SOT or SOIC packages but  
has the added advantage of improved thermal performance  
due to an enlarged tab for heatsinking. Power dissipation of  
greater than 1.25 W is possible in a typical surface mount  
application.  
VDS (V)  
250  
RDS(on) ()  
VGS = 10 V  
2.0  
Qg (Max.) (nC)  
8.2  
1.8  
Q
gs (nC)  
gd (nC)  
Q
4.5  
Configuration  
Single  
ORDERING INFORMATION  
Package  
SOT-223  
SiHFL214TR-GE3 a  
IRFL214TRPbF-BE3 a, b  
IRFL214TRPbF a  
Lead (Pb)-free and halogen-free  
Lead (Pb)-free  
Notes  
a. See device orientation  
b. “-BE3” denotes alternate manufacturing location  
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)  
PARAMETER  
SYMBOL  
LIMIT  
250  
UNIT  
Drain-source voltage  
Gate-source voltage  
VDS  
V
VGS  
20  
T
C = 25 °C  
0.79  
0.50  
6.3  
Continuous drain current  
VGS at 10 V  
ID  
TC = 100 °C  
A
Pulsed drain current a  
IDM  
Linear derating factor  
0.025  
0.017  
50  
W/°C  
Linear derating factor (PCB mount) e  
Single pulse avalanche energy b  
Avalanche current a  
EAS  
IAR  
mJ  
A
0.79  
0.31  
3.1  
Repetitive avalanche energy a  
EAR  
mJ  
Maximum power dissipation  
TC = 25 °C  
PD  
W
V/ns  
°C  
Maximum power dissipation (PCB mount) e  
Peak diode recovery dv/dt c  
TA = 25 °C  
2.0  
dV/dt  
4.8  
Operating junction and storage temperature range  
Soldering recommendations (peak temperature) d  
TJ, Tstg  
-55 to +150  
300  
For 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)  
b. VDD = 50 V, starting TJ = 25 °C, L = 128 mH, Rg = 25 , IAS = 0.79 A (see fig. 12)  
c. ISD 2.7 A, dI/dt 65 A/μs, VDD VDS, TJ 150 °C  
d. 1.6 mm from case  
e. When mounted on 1" square PCB (FR-4 or G-10 material)  
S21-0322-Rev. F, 05-Apr-2021  
Document Number: 91194  
1
For technical questions, contact: hvm@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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