5秒后页面跳转
IRFL214PBF PDF预览

IRFL214PBF

更新时间: 2024-11-16 05:39:31
品牌 Logo 应用领域
威世 - VISHAY 晶体小信号场效应晶体管开关光电二极管局域网
页数 文件大小 规格书
8页 878K
描述
Power MOSFET

IRFL214PBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-261AA
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:6.87Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:4703
Samacsys Pin Count:4Samacsys Part Category:Integrated Circuit
Samacsys Package Category:SOT223 (3-Pin)Samacsys Footprint Name:SOT-223-1
Samacsys Released Date:2015-04-22 06:46:49Is Samacsys:N
其他特性:AVALANCHE RATED外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:250 V
最大漏极电流 (Abs) (ID):0.79 A最大漏极电流 (ID):0.79 A
最大漏源导通电阻:2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-261AAJESD-30 代码:R-PDSO-G4
湿度敏感等级:3元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):3.1 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRFL214PBF 数据手册

 浏览型号IRFL214PBF的Datasheet PDF文件第2页浏览型号IRFL214PBF的Datasheet PDF文件第3页浏览型号IRFL214PBF的Datasheet PDF文件第4页浏览型号IRFL214PBF的Datasheet PDF文件第5页浏览型号IRFL214PBF的Datasheet PDF文件第6页浏览型号IRFL214PBF的Datasheet PDF文件第7页 
IRFL214, SiHFL214  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Surface Mount  
PRODUCT SUMMARY  
VDS (V)  
250  
Available  
• Available in Tape and Reel  
• Dynamic dV/dt Rating  
R
DS(on) (Ω)  
VGS = 10 V  
2.0  
RoHS*  
COMPLIANT  
Qg (Max.) (nC)  
8.2  
1.8  
• Repetitive Avalanche Rated  
• Fast Switching  
Q
Q
gs (nC)  
gd (nC)  
4.5  
• Ease of Paralleling  
Configuration  
Single  
• Simple Drive Requirements  
• Lead (Pb)-free Available  
D
DESCRIPTION  
SOT-223  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
G
The SOT-223 package is designed for surface-mounting  
using vapor phase, infrared, or wave soldering techniques.  
Its unique package design allows for easy automatic  
pick-and-place as with other SOT or SOIC packages but has  
the added advantage of improved thermal performace due to  
an enlarged tab for heatsinking. Power dissipation of greater  
than 1.25 W is possible in a typical surface mount  
application.  
S
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
SOT-223  
SOT-223  
IRFL214PbF  
SiHFL214-E3  
IRFL214  
IRFL214TRPbFa  
SiHFL214T-E3a  
IRFL214TRa  
SiHFL214Ta  
Lead (Pb)-free  
SnPb  
SiHFL214  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
250  
20  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
TC = 25 °C  
TC =100°C  
0.79  
0.50  
6.3  
Continuous Drain Current  
VGS at 10 V  
ID  
A
Pulsed Drain Currenta  
IDM  
Linear Derating Factor  
0.025  
0.017  
50  
W/°C  
Linear Derating Factor (PCB Mount)e  
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
Maximum Power Dissipation  
Maximum Power Dissipation (PCB Mount)e  
EAS  
IAR  
mJ  
A
0.79  
0.31  
3.1  
EAR  
mJ  
T
C = 25 °C  
PD  
W
TA = 25 °C  
2.0  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91194  
S-81393-Rev. A, 07-Jul-08  
www.vishay.com  
1

与IRFL214PBF相关器件

型号 品牌 获取价格 描述 数据表
IRFL214TR VISHAY

获取价格

Power MOSFET
IRFL214TRPBF VISHAY

获取价格

Power MOSFET
IRFL30N20D ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 30A I(D) | TO-262
IRFL30N20DPBF INFINEON

获取价格

Power Field-Effect Transistor, 30A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Me
IRFL31N20D INFINEON

获取价格

Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Me
IRFL31N20DPBF INFINEON

获取价格

Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Me
IRFL4105 INFINEON

获取价格

Power MOSFET(Vdss=55V, Rds(on)=0.045ohm, Id=3.7A)
IRFL4105PBF INFINEON

获取价格

HEXFET㈢ Power MOSFET
IRFL4105TR INFINEON

获取价格

暂无描述
IRFL4105TRPBF INFINEON

获取价格

Power Field-Effect Transistor, 3.7A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Me