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IRFL110 PDF预览

IRFL110

更新时间: 2024-11-16 05:39:31
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 1456K
描述
Power MOSFET

IRFL110 数据手册

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IRFL110, SiHFL110  
Vishay Siliconix  
Power MOSFET  
FEATURES  
PRODUCT SUMMARY  
VDS (V)  
• Surface Mount  
100  
• Available in Tape and Reel  
• Dynamic dV/dt Rating  
Available  
RDS(on) (Ω)  
VGS = 10 V  
0.54  
RoHS*  
COMPLIANT  
• Repetitive Avalanche Rated  
• Fast Switching  
• Ease of Paralleling  
• Simple Drive Requirements  
• Lead (Pb)-free Available  
Qg (Max.) (nC)  
8.3  
2.3  
Q
Q
gs (nC)  
gd (nC)  
3.8  
Configuration  
Single  
D
DESCRIPTION  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
The SOT-223 package is designed for surface-mounting  
using vapor phase, infrared, or wave soldering techniques.  
Its unique package design allows for easy automatic  
pick-and-place as with other SOT or SOIC packages but has  
the added advantage of improved thermal performance due  
to an enlarged tab for heatsinking. Power dissipation of  
greater than 1.25 W is possible in a typical surface mount  
application.  
SOT-223  
G
S
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
SOT-223  
SOT-223  
IRFL110PbF  
SiHFL110-E3  
IRFL110  
IRFL110TRPbFa  
SiHFL110T-E3a  
IRFL110TRa  
SiHFL110Ta  
Lead (Pb)-free  
SnPb  
SiHFL110  
Note  
a. See device orientation.  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
Drain-Source Voltage  
Gate-Source Voltage  
SYMBOL  
LIMIT  
100  
UNIT  
VDS  
V
VGS  
20  
T
C = 25 °C  
1.5  
Continuous Drain Current  
V
GS at 10 V  
ID  
TC =100°C  
0.96  
12  
A
Pulsed Drain Currenta  
IDM  
Linear Derating Factor  
0.025  
0.017  
150  
W/°C  
Linear Derating Factor (PCB Mount)e  
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
EAS  
IAR  
mJ  
A
1.5  
Repetitive Avalanche Energya  
EAR  
0.31  
3.1  
mJ  
Maximum Power Dissipation  
Maximum Power Dissipation (PCB Mount)e  
Peak Diode Recovery dV/dtc  
TC = 25 °C  
PD  
W
V/ns  
°C  
TA = 25 °C  
2.0  
dV/dt  
5.5  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
TJ, Tstg  
- 55 to + 150  
300d  
for 10 s  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 25 V, starting TJ = 25 °C, L = 25 mH, RG = 25 Ω, IAS = 3.0 A (see fig. 12).  
c. ISD 5.6 A, dI/dt 75 A/µs, VDD VDS, TJ 150 °C.  
d. 1.6 mm from case.  
e. When mounted on 1" square PCB (FR-4 or G-10 material).  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91192  
S-81361-Rev. A, 07-Jul-08  
www.vishay.com  
1

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