IRFL110, SiHFL110
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Surface Mount
100
• Available in Tape and Reel
• Dynamic dV/dt Rating
Available
RDS(on) (Ω)
VGS = 10 V
0.54
RoHS*
COMPLIANT
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
Qg (Max.) (nC)
8.3
2.3
Q
Q
gs (nC)
gd (nC)
3.8
Configuration
Single
D
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SOT-223 package is designed for surface-mounting
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance due
to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a typical surface mount
application.
SOT-223
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
SOT-223
SOT-223
IRFL110PbF
SiHFL110-E3
IRFL110
IRFL110TRPbFa
SiHFL110T-E3a
IRFL110TRa
SiHFL110Ta
Lead (Pb)-free
SnPb
SiHFL110
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
LIMIT
100
UNIT
VDS
V
VGS
20
T
C = 25 °C
1.5
Continuous Drain Current
V
GS at 10 V
ID
TC =100°C
0.96
12
A
Pulsed Drain Currenta
IDM
Linear Derating Factor
0.025
0.017
150
W/°C
Linear Derating Factor (PCB Mount)e
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
EAS
IAR
mJ
A
1.5
Repetitive Avalanche Energya
EAR
0.31
3.1
mJ
Maximum Power Dissipation
Maximum Power Dissipation (PCB Mount)e
Peak Diode Recovery dV/dtc
TC = 25 °C
PD
W
V/ns
°C
TA = 25 °C
2.0
dV/dt
5.5
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
TJ, Tstg
- 55 to + 150
300d
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 25 mH, RG = 25 Ω, IAS = 3.0 A (see fig. 12).
c. ISD ≤ 5.6 A, dI/dt ≤ 75 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91192
S-81361-Rev. A, 07-Jul-08
www.vishay.com
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