Datasheet > IRFL110, SiHFL110

IRFL110, SiHFL110

更新时间： 2024-09-29 14:55:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	2015K
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Power MOSFET

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IRFL110, SiHFL110

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Surface-mount

• Available in tape and reel

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Fast switching

• Ease of paralleling

• Simple drive requirements

SOT-223

Available

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

Marking code: FB

PRODUCT SUMMARY

The SOT-223 package is designed for surface-mounting

using vapor phase, infrared, or wave soldering techniques.

Its unique package design allows for easy automatic

pick-and-place as with other SOT or SOIC packages but

has the added advantage of improved thermal performance

due to an enlarged tab for heatsinking. Power dissipation of

greater than 1.25 W is possible in a typical surface mount

application.

V_DS(V)

100

R_DS(on)()

V_GS= 10 V

0.54

Q_g(Max.) (nC)

8.3

2.3

_gs(nC)

_gd(nC)

3.8

Configuration

Single

ORDERING INFORMATION

Package

SOT-223

SiHFL110TR-GE3 ^a

SiHFL110TR-BE3 ^{a, b}

IRFL110TRPBF-BE3 ^{a, b}

IRFL110TRPbF ^a

Lead (Pb)-free and halogen-free

Lead (Pb)-free

Notes

a. See device orientation

b. “-BE3” denotes alternate manufacturing location

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

Drain-source voltage

Gate-source voltage

SYMBOL

LIMIT

100

UNIT

V_DS

V_GS

_C= 25 °C

1.5

0.96

Continuous drain current

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed drain current ^a

I_DM

Linear derating factor

0.025

0.017

150

W/°C

Linear derating factor (PCB mount) ^e

Single pulse avalanche energy ^b

Avalanche current ^a

E_AS

I_AR

1.5

Repetitive avalanche energy ^a

E_AR

0.31

3.1

Maximum power dissipation

T_C= 25 °C

P_D

V/ns

°C

Maximum power dissipation (PCB mount) ^e

Peak diode recovery dv/dt ^c

T_A= 25 °C

2.0

dV/dt

5.5

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^d

T_J, T_stg

-55 to +150

300

For 10 s

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. V_DD= 25 V, starting T_J= 25 °C, L = 25 mH, R_g= 25 , I_AS= 3.0 A (see fig. 12)

c. I_SD 5.6 A, dI/dt  75 A/μs, V_DD V_DS, T_J 150 °C

d. 1.6 mm from case

e. When mounted on 1" square PCB (FR-4 or G-10 material)

S21-1217-Rev. G, 20-Dec-2021

Document Number: 91192

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与IRFL110, SiHFL110相关器件

型号	品牌	获取价格	描述	数据表
IRFL110PBF	VISHAY	获取价格	Power MOSFET
IRFL110PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFL110TR	VISHAY	获取价格	Power MOSFET
IRFL110TRPBF	VISHAY	获取价格	Power MOSFET
IRFL210	VISHAY	获取价格	Power MOSFET
IRFL210	INFINEON	获取价格	Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.96A)
IRFL210, SiHFL210	VISHAY	获取价格	Power MOSFET
IRFL210PBF	VISHAY	获取价格	Power MOSFET
IRFL210PBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRFL210TR	VISHAY	获取价格	Power MOSFET

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