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STN1NF10 PDF预览

STN1NF10

更新时间: 2024-11-15 22:10:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
8页 271K
描述
N-CHANNEL 100V - 0.7ohm - 1A SOT-223 STripFET⑩ II POWER MOSFET

STN1NF10 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT-223包装说明:SMALL OUTLINE, R-PDSO-G4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.78
Samacsys Confidence:4Samacsys Status:Released
Samacsys PartID:222365Samacsys Pin Count:4
Samacsys Part Category:TransistorSamacsys Package Category:SOT223 (3-Pin)
Samacsys Footprint Name:SOT223 (STN1NF10)Samacsys Released Date:2016-11-10 13:24:36
Is Samacsys:N外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):1 A最大漏极电流 (ID):1 A
最大漏源导通电阻:0.8 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
最低工作温度:-55 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2.5 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STN1NF10 数据手册

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STN1NF10  
N-CHANNEL 100V - 0.7- 1A SOT-223  
STripFET™ II POWER MOSFET  
V
R
I
D
TYPE  
DSS  
DS(on)  
STN1NF10  
100 V  
< 0.8 Ω  
1 A  
TYPICAL R (on) = 0.7 Ω  
DS  
EXCEPTIONAL dv/dt CAPABILITY  
2
DESCRIPTION  
3
This Power MOSFET is the latest development of  
STMicroelectronis unique "Single Feature Size™"  
strip-based process. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalanche characteristics and  
less critical alignment steps therefore a remark-  
able manufacturing reproducibility.  
2
1
SOT-223  
APPLICATIONS  
DC-DC CONVERTERS  
INTERNAL SCHEMATIC DIAGRAM  
DC MOTOR CONTROL (DISK DRIVERS, etc.)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
100  
100  
± 20  
1
Unit  
V
V
Drain-source Voltage (V = 0)  
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
V
DGR  
GS  
V
GS  
Gate- source Voltage  
V
I
Drain Current (continuos) at T = 25°C  
A
D
C
I
Drain Current (continuos) at T = 100°C  
0.6  
4
A
D
C
I
()  
Drain Current (pulsed)  
A
DM  
P
Total Dissipation at T = 25°C  
2.5  
0.02  
20  
W
tot  
C
Derating Factor  
W/°C  
V/ns  
mJ  
(1)  
(2)  
Peak Diode Recovery voltage slope  
Single Pulse Avalanche Energy  
Storage Temperature  
dv/dt  
E
35  
AS  
T
stg  
-55 to 150  
°C  
T
Max. Operating Junction Temperature  
j
() Pulse width limited by safe operating area.  
(1) I 1A, di/dt 350A/µs, V V  
, T T  
(BR)DSS j JMAX  
SD  
DD  
o
(2) Starting T = 25 C, I = 1A, V = 70V  
j
D
DD  
October 2001  
1/8  
.

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