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IRFB3307Z PDF预览

IRFB3307Z

更新时间: 2023-12-06 20:09:05
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 321K
描述
The StrongIRFET? power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.?

IRFB3307Z 数据手册

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IRFB/S/SL3307ZPbF  
20  
15  
10  
5
4.5  
4.0  
3.5  
3.0  
2.5  
I = 48A  
F
V
= 64V  
R
T = 25°C  
J
T = 125°C  
J
I
I
I
I
= 150μA  
= 250μA  
= 1.0mA  
= 1.0A  
2.0  
1.5  
1.0  
0.5  
D
D
D
D
0
0
200  
400  
600  
800  
1000  
-75 -50 -25  
0
25 50 75 100 125 150175 200  
di /dt (A/μs)  
T , Temperature ( °C )  
F
J
Fig. 17 - Typical Recovery Current vs. dif/dt  
Fig 16. Threshold Voltage vs. Temperature  
20  
420  
I = 72A  
I = 48A  
F
F
V
= 64V  
V
= 64V  
R
R
340  
260  
180  
100  
20  
T = 25°C  
T = 25°C  
J
J
15  
10  
5
T = 125°C  
J
T = 125°C  
J
0
0
200  
400  
600  
800  
1000  
0
200  
400  
600  
800  
1000  
di /dt (A/μs)  
di /dt (A/μs)  
F
F
Fig. 18 - Typical Recovery Current vs. dif/dt  
Fig. 19 - Typical Stored Charge vs. dif/dt  
420  
I = 72A  
F
V
= 64V  
R
340  
260  
180  
100  
20  
T = 25°C  
J
T = 125°C  
J
0
200  
400  
600  
800  
1000  
di /dt (A/μs)  
F
Fig. 20 - Typical Stored Charge vs. dif/dt  
6
www.irf.com  

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