Datasheet > IRFB3307Z

IRFB3307Z

更新时间： 2023-12-06 20:09:05

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
12页	321K
描述
The StrongIRFET? power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.?

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IRFB3307Z 数据手册

IRFB/S/SL3307ZPbF

1000

100

1000

100

VGS

15V

10V

8.0V

6.0V

5.5V

5.0V

4.8V

4.5V

VGS

15V

10V

8.0V

6.0V

5.5V

5.0V

4.8V

4.5V

TOP

BOTTOM

4.5V

60μs PULSE WIDTH

Tj = 175°C

≤

60μs PULSE WIDTH

Tj = 25°C

≤

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

1000

100

2.5

2.0

1.5

1.0

0.5

= 72A

= 10V

= 175°C

= 25°C

= 25V

≤

60μs PULSE WIDTH

0.1

-60 -40 -20 0 20 40 60 80 100120140160180

, Junction Temperature (°C)

, Gate-to-Source Voltage (V)

Fig 4. Normalized On-Resistance vs. Temperature

Fig 3. Typical Transfer Characteristics

12.0

100000

10000

1000

= 0V,

= C

f = 1 MHZ

= 72A

+ C , C

SHORTED

iss

= C

10.0

8.0

6.0

4.0

2.0

0.0

rss

oss

= 60V

= 38V

= 15V

= C + C

iss

oss

rss

100

10 20 30 40 50 60 70 80 90

, Drain-to-Source Voltage (V)

100

Q , Total Gate Charge (nC)

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage

Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

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1 234 5 6 7...12

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