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IRF8707TRPBF PDF预览

IRF8707TRPBF

更新时间: 2024-11-02 12:01:15
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
9页 254K
描述
HEXFET® Power MOSFET

IRF8707TRPBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
Factory Lead Time:15 weeks风险等级:1.12
Is Samacsys:N雪崩能效等级(Eas):53 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):11 A最大漏极电流 (ID):11 A
最大漏源导通电阻:0.0119 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MS-012AAJESD-30 代码:R-PDSO-G8
湿度敏感等级:1元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2.5 W最大脉冲漏极电流 (IDM):88 A
子类别:FET General Purpose Power表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRF8707TRPBF 数据手册

 浏览型号IRF8707TRPBF的Datasheet PDF文件第2页浏览型号IRF8707TRPBF的Datasheet PDF文件第3页浏览型号IRF8707TRPBF的Datasheet PDF文件第4页浏览型号IRF8707TRPBF的Datasheet PDF文件第5页浏览型号IRF8707TRPBF的Datasheet PDF文件第6页浏览型号IRF8707TRPBF的Datasheet PDF文件第7页 
PD - 96118A  
IRF8707PbF  
HEXFET® Power MOSFET  
Applications  
l
Control MOSFET of Sync-Buck  
Converters used for Notebook  
Processor Power  
Control MOSFET for Isolated  
DC-DC Converters in Networking  
Systems  
VDSS  
30V  
RDS(on) max  
11.9m @VGS = 10V  
Qg  
6.2nC  
l
A
A
D
1
2
3
4
8
7
Benefits  
S
S
S
G
l
l
l
l
Very Low Gate Charge  
D
Very Low RDS(on) at 4.5V VGS  
Ultra-Low Gate Impedance  
Fully Characterized Avalanche Voltage  
and Current  
6
5
D
D
SO-8  
Top View  
l
l
l
20V VGS Max. Gate Rating  
100% tested for Rg  
Lead-Free  
Description  
The IRF8707PbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the  
industry standard SO-8 package. The IRF8707PbF has been optimized for parameters that are  
critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction  
and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC  
converters that power the latest generation of processors for notebook and Netcom applications.  
Absolute Maximum Ratings  
Parameter  
Drain-to-Source Voltage  
Max.  
30  
Units  
VDS  
V
V
Gate-to-Source Voltage  
± 20  
11  
GS  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
I
I
I
@ TA = 25°C  
D
D
@ TA = 70°C  
9.1  
88  
A
DM  
P
P
@TA = 25°C  
@TA = 70°C  
Power Dissipation  
Power Dissipation  
2.5  
1.6  
D
D
W
Linear Derating Factor  
Operating Junction and  
0.02  
-55 to + 150  
W/°C  
°C  
T
J
T
Storage Temperature Range  
STG  
Thermal Resistance  
Parameter  
Junction-to-Drain Lead  
Junction-to-Ambient  
Typ.  
–––  
Max.  
20  
Units  
RθJL  
RθJA  
°C/W  
–––  
50  
Notes through are on page 9  
www.irf.com  
1
10/24/07  

IRF8707TRPBF 替代型号

型号 品牌 替代类型 描述 数据表
IRF8707PBF INFINEON

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