是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | SOIC |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 3.04 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 10 A | 最大漏极电流 (ID): | 10 A |
最大漏源导通电阻: | 0.012 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 2.5 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
FDS4410 | FAIRCHILD |
类似代替 |
Single N-Channel Logic Level PWM Optimized PowerTrenchTM MOSFET | |
IRF8707GTRPBF | INFINEON |
功能相似 |
Control MOSFET of Sync-Buck Converters used for Notebook Processor Power | |
IRF8707TRPBF | INFINEON |
功能相似 |
HEXFET® Power MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDS6690AS_08 | FAIRCHILD |
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暂无描述 | |
FDS6690S | FAIRCHILD |
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FDS6690S | ROCHESTER |
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10000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOIC-8 | |
FDS6690S_NL | FAIRCHILD |
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FDS6690S_NL | ROCHESTER |
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FDS6690SF011 | FAIRCHILD |
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FDS6690SL86Z | FAIRCHILD |
获取价格 |
Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal- |