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FDS6690AS PDF预览

FDS6690AS

更新时间: 2024-11-19 22:49:03
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管开关光电二极管PC
页数 文件大小 规格书
8页 134K
描述
30V N-Channel PowerTrench SyncFET

FDS6690AS 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOIC
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:3.04
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):10 A最大漏极电流 (ID):10 A
最大漏源导通电阻:0.012 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2.5 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDS6690AS 数据手册

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December 2004  
FDS6690AS  
30V N-Channel PowerTrench® SyncFET™  
General Description  
Features  
The FDS6690AS is designed to replace a single SO-8  
MOSFET and Schottky diode in synchronous DC:DC  
power supplies. This 30V MOSFET is designed to  
maximize power conversion efficiency, providing a low  
10 A, 30 V. RDS(ON) max= 12 m@ VGS = 10 V  
RDS(ON) max= 15 m@ VGS = 4.5 V  
Includes SyncFET Schottky diode  
Low gate charge (16nC typical)  
RDS(ON)  
and low gate charge.  
The FDS6690AS  
includes an integrated Schottky diode using Fairchild’s  
monolithic SyncFET technology. The performance of  
the FDS6690AS as the low-side switch in  
a
synchronous rectifier is close to the performance of the  
FDS6690A in parallel with a Schottky diode.  
High performance trench technology for extremely low  
RDS(ON)  
Applications  
High power and current handling capability  
DC/DC converter  
Low side notebooks  
D
D
D
5
6
7
8
4
3
2
1
D
G
S
S
SO-8  
S
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
Drain-Source Voltage  
Gate-Source Voltage  
30  
V
VGSS  
ID  
V
A
±20  
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
10  
50  
PD  
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
2.5  
W
1.2  
1
(Note 1c)  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
50  
25  
RθJA  
°C/W  
°C/W  
RθJC  
Package Marking and Ordering Information  
Device Marking  
FDS6690AS  
Device  
Reel Size  
13’’  
Tape width  
12mm  
Quantity  
FDS6690AS  
2500 units  
2500 units  
FDS6690AS  
FDS6690AS_NL (Note 4)  
13’’  
12mm  
FDS6690AS Rev A(X)  
©2004 Fairchild Semiconductor Corporation  

FDS6690AS 替代型号

型号 品牌 替代类型 描述 数据表
FDS4410 FAIRCHILD

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