Datasheet > FDS6814

FDS6814

更新时间： 2024-02-21 07:24:13

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
6页	231K
描述
Dual N-Channel 2.5V Specified PowerTrench⑩ MOSFET

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FDS6814 数据手册

July 1999

ADVANCE INFORMATION

FDS6814

Dual N-Channel 2.5V Specified PowerTrench^TMMOSFET

General Description

Features

These N-Channel 2.5V specified MOSFETs are produced

using a rugged gate version of Fairchild's advanced

PowerTrench^TMprocess. It has been optimized for

power management applications which require a wide

range of gate drive voltage.

8 A, 20 V. R_DS(ON)= 0.020 Ω @ V_GS= 4.5 V

R_DS(ON)= 0.030 Ω @ V_GS= 2.5 V

Rugged gate rating ( ±12V).

Low gate charge.

Applications

Fast switching speed.

Low voltage DC/DC Converters

Load switch

High performance trench technology for extremely

low R_DS(ON)

Battery protection

Power management

High power and current handling capability.

SO-8

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

I_D

Gate-Source Voltage

±12

Drain Current - Continuous

- Pulsed

(Note 1a)

P_D

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

2.0

(Note 1a)

(Note 1b)

1.6

1.0

(Note 1c)

0.9

T_J, T_stg

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R_θ_JA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

°C/W

Thermal Resistance, Junction-to-Case

R_θ_JC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

2500 units

FDS6814

13’’

12mm

FDS6814 Rev. A

1999 Fairchild Semiconductor Corporation

12 3 4 5 6

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