5秒后页面跳转
FDS6894 PDF预览

FDS6894

更新时间: 2024-01-27 15:02:22
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
5页 83K
描述
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

FDS6894 技术参数

是否无铅:不含铅生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.84
Is Samacsys:NBase Number Matches:1

FDS6894 数据手册

 浏览型号FDS6894的Datasheet PDF文件第2页浏览型号FDS6894的Datasheet PDF文件第3页浏览型号FDS6894的Datasheet PDF文件第4页浏览型号FDS6894的Datasheet PDF文件第5页 
October 2001  
FDS6894A  
Dual N-Channel Logic Level PWM Optimized PowerTrenchÒ MOSFET  
General Description  
Features  
These N-Channel Logic Level MOSFETs are produced  
·
8 A, 20 V.  
RDS(ON) = 17 mW @ VGS = 4.5 V  
RDS(ON) = 20 mW @ VGS = 2.5 V  
RDS(ON) = 30 mW @ VGS = 1.8 V  
using  
Fairchild  
Semiconductor’s  
advanced  
PowerTrench process that has been especially tailored  
to minimize the on-state resistance and yet maintain  
superior switching performance.  
·
·
Low gate charge (17 nC)  
These devices are well suited for low voltage and  
battery powered applications where low in-line power  
loss and fast switching are required.  
High performance trench technology for extremely  
low RDS(ON)  
·
High power and current handling capability  
D1  
5
6
7
8
4
3
2
1
D1  
D2  
Q1  
Q2  
D2  
G1  
SO-8  
S1  
G2  
S2  
Pin 1  
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
20  
V
V
A
VGSS  
Gate-Source Voltage  
± 8  
ID  
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
8
32  
PD  
W
Power Dissipation for Dual Operation  
Power Dissipation for Single Operation  
2
(Note 1a)  
(Note 1b)  
1.6  
1
0.9  
(Note 1c)  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
RqJA  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1)  
78  
40  
°C/W  
°C/W  
RqJC  
Thermal Resistance, Junction-to-Case  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
FDS6894A  
FDS6894A  
13’’  
12mm  
2500 units  
FDS6894A Rev C (W)  
Ó2001 Fairchild Semiconductor Corporation  

与FDS6894相关器件

型号 品牌 获取价格 描述 数据表
FDS6894A FAIRCHILD

获取价格

Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6894A_NL FAIRCHILD

获取价格

Power Field-Effect Transistor, 8A I(D), 20V, 0.017ohm, 2-Element, N-Channel, Silicon, Meta
FDS6894AZ FAIRCHILD

获取价格

Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6894AZ_NL FAIRCHILD

获取价格

暂无描述
FDS6894AZF011 FAIRCHILD

获取价格

Power Field-Effect Transistor, 8A I(D), 20V, 0.017ohm, 2-Element, N-Channel, Silicon, Meta
FDS6894AZL86Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 8A I(D), 20V, 0.017ohm, 2-Element, N-Channel, Silicon, Meta
FDS6898A FAIRCHILD

获取价格

Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6898A NSC

获取价格

Synchronous Buck Controller with Pre-bias Startup, and Optional Clock Synchronization
FDS6898A ADI

获取价格

Dual 5 A, 20 V Synchronous Step-Down
FDS6898A ONSEMI

获取价格

双 N 沟道,逻辑电平,PWM 优化,PowerTrench® MOSFET,20V,9.