Datasheet > FDS6898AZ_10

FDS6898AZ_10

更新时间： 2024-11-24 06:59:07

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	327K
描述
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET

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FDS6898AZ_10 数据手册

February 2010

FDS6898AZ_F085

Dual N-Channel Logic Level PWM Optimized PowerTrench^ÒMOSFET

General Description

Features

These N-Channel Logic Level MOSFETs are produced

9.4 A, 20 V

R_DS(ON)= 14 mW @ V_GS= 4.5 V

R_DS(ON)= 18 mW @ V_GS= 2.5 V

using

Fairchild

Semiconductor’s

advanced

PowerTrench process that has been especially tailored

to minimize the on-state resistance and yet maintain

superior switching performance.

Low gate charge (16 nC typical)

ESD protection diode (note 3)

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

High performance trench technology for extremely

low R_DS(ON)

High power and current handling capability

· Qualified to AEC Q101

· RoHS Compliant

SO-8

Pin 1

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

Gate-Source Voltage

± 12

I_D

Drain Current – Continuous

– Pulsed

(Note 1a)

9.4

P_D

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

1.6

0.9

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

R_qJA

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

°C/W

R_qJC

Thermal Resistance, Junction-to-Case

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6898AZ

FDS6898AZ_F085

13’’

12mm

2500 units

FDS6898AZ_F085 Rev. A

www.fairchildsemi.com

12 3 4 5

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与FDS6898AZ_10相关器件

型号	品牌	获取价格	描述	数据表
FDS6898AZ_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 9.4A I(D), 20V, 0.014ohm, 2-Element, N-Channel, Silicon, Me
FDS6898AZ-F085	ONSEMI	获取价格	20 V、9.4 A、10 mΩ、SO-8，逻辑电平双通道 N 沟道 PowerTrenc
FDS6900AS	FAIRCHILD	获取价格	Dual N-Ch PowerTrench SyncFET
FDS6900AS	ONSEMI	获取价格	双 N 沟道 PowerTrench® SyncFET™ 30V
FDS6900AS_NL	FAIRCHILD	获取价格	Dual N-Ch PowerTrench SyncFET
FDS6900S	FAIRCHILD	获取价格	Dual N-Ch PowerTrench SyncFet⑩
FDS6900S_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 6.9A I(D), 30V, 0.03ohm, 2-Element, N-Channel, Silicon, Met
FDS6910	FAIRCHILD	获取价格	Dual N-Channel Logic Level PowerTrench MOSFET
FDS6910	ONSEMI	获取价格	双 N 沟道，逻辑电平，PowerTrench® MOSFET，30V，7.5A，17mΩ
FDS6910_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 7.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal