是否无铅: | 不含铅 | 生命周期: | End Of Life |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
Factory Lead Time: | 1 week | 风险等级: | 5.15 |
Is Samacsys: | N | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 6 A |
最大漏极电流 (ID): | 6 A | 最大漏源导通电阻: | 0.028 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 2 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 2 W |
最大脉冲漏极电流 (IDM): | 20 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDS6912_0007 | FAIRCHILD |
获取价格 |
Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET | |
FDS6912_NL | FAIRCHILD |
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Power Field-Effect Transistor, 6A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Meta | |
FDS6912A | FAIRCHILD |
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Dual N-Channel, Logic Level, PowerTrenchTM MOSFET | |
FDS6912A | ONSEMI |
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双 N 沟道,逻辑电平,PowerTrench® MOSFET,30V,6A,28mΩ | |
FDS6912A | UMW |
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种类:N+N-Channel;漏源电压(Vdss):30V;持续漏极电流(Id)(在25° | |
FDS6912A_03 | FAIRCHILD |
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Dual N-Channel Logic Level PowerTrench MOSFET | |
FDS6912A_NB5E021A | FAIRCHILD |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
FDS6912A_NB5E028A | FAIRCHILD |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
FDS6912A_NB5E031A | FAIRCHILD |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
FDS6912A_NF40 | FAIRCHILD |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |