生命周期: | Obsolete | 零件包装代码: | SOT |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | 针数: | 8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.47 | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 5.5 A |
最大漏源导通电阻: | 0.04 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G8 | 元件数量: | 2 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | GULL WING |
端子位置: | DUAL | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDS6930AS62Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 5.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal | |
FDS6930B | FAIRCHILD |
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Dual N-Channel Logic Level PowerTrench MOSFET | |
FDS6930B | ONSEMI |
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双 N 沟道,逻辑电平,PowerTrench® MOSFET,30V,5.5A,38mΩ | |
FDS6930B (KDS6930B) | KEXIN |
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Dual N-Channel MOSFET | |
FDS6930B_10 | FAIRCHILD |
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Dual N-Channel Logic Level PowerTrench® MOSF | |
FDS6930B_NL | FAIRCHILD |
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Small Signal Field-Effect Transistor, 5.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal | |
FDS6930B-SBNT001 | FAIRCHILD |
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Transistor | |
FDS6961 | FAIRCHILD |
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Dual N-Channel Logic Level PowerTrenchTM MOSFET | |
FDS6961A | FAIRCHILD |
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Dual N-Channel Logic Level PowerTrenchTM MOSFET | |
FDS6961A | ONSEMI |
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双 N 沟道逻辑电平 PowerTrench® MOSFET 30V,3.5A,90mΩ |