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FDS6912A-NB5E0121 PDF预览

FDS6912A-NB5E0121

更新时间: 2024-09-30 14:42:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
5页 120K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

FDS6912A-NB5E0121 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:,Reach Compliance Code:unknown
风险等级:5.84Is Samacsys:N
最大漏极电流 (Abs) (ID):6 AFET 技术:METAL-OXIDE SEMICONDUCTOR
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1.6 W
子类别:FET General Purpose Power表面贴装:YES
Base Number Matches:1

FDS6912A-NB5E0121 数据手册

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July 2003  
FDS6912A  
Dual N-Channel Logic Level PowerTrenchÒ MOSFET  
General Description  
Features  
These N-Channel Logic Level MOSFETs are produced  
·
6 A, 30 V.  
RDS(ON) = 28 mW @ VGS = 10 V  
RDS(ON) = 35 mW @ VGS = 4.5 V  
using  
Fairchild  
Semiconductor’s  
advanced  
PowerTrench process that has been especially tailored  
to minimize the on-state resistance and yet maintain  
superior switching performance.  
·
·
Fast switching speed  
Low gate charge  
These devices are well suited for low voltage and  
battery powered applications where low in-line power  
loss and fast switching are required.  
·
High performance trench technology for extremely  
low RDS(ON)  
·
High power and current handling capability  
D1  
5
6
7
8
4
3
2
1
D1  
D2  
Q1  
Q2  
D2  
G1  
SO-8  
S1  
G2  
S2  
Pin 1  
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
30  
V
V
A
VGSS  
Gate-Source Voltage  
± 20  
ID  
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
6
20  
1.6  
PD  
W
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
(Note 1c)  
1.0  
0.9  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1)  
78  
40  
RqJA  
°C/W  
°C/W  
Thermal Resistance, Junction-to-Case  
RqJC  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
FDS6912A  
FDS6912A  
13’’  
12mm  
2500 units  
FDS6912A Rev D(W)  
Ó2003 Fairchild Semiconductor Corporation  

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