Datasheet > FDS6912A_NB5E021A

FDS6912A_NB5E021A

更新时间： 2024-09-30 14:42:11

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	120K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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FDS6912A_NB5E021A 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	Is Samacsys：	N
最大漏极电流 (Abs) (ID)：	6 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	150 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	1.6 W
子类别：	FET General Purpose Power	表面贴装：	YES
Base Number Matches：	1

FDS6912A_NB5E021A 数据手册

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July 2003

FDS6912A

Dual N-Channel Logic Level PowerTrench^ÒMOSFET

General Description

Features

These N-Channel Logic Level MOSFETs are produced

6 A, 30 V.

R_DS(ON)= 28 mW @ V_GS= 10 V

R_DS(ON)= 35 mW @ V_GS= 4.5 V

using

Fairchild

Semiconductor’s

advanced

PowerTrench process that has been especially tailored

to minimize the on-state resistance and yet maintain

superior switching performance.

Fast switching speed

Low gate charge

These devices are well suited for low voltage and

battery powered applications where low in-line power

loss and fast switching are required.

High performance trench technology for extremely

low R_DS(ON)

High power and current handling capability

SO-8

Pin 1

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

Gate-Source Voltage

± 20

I_D

Drain Current – Continuous

– Pulsed

(Note 1a)

1.6

P_D

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

1.0

0.9

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

R_qJA

°C/W

Thermal Resistance, Junction-to-Case

R_qJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6912A

13’’

12mm

2500 units

FDS6912A Rev D(W)

Ó2003 Fairchild Semiconductor Corporation

12 3 4 5

中文翻译

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与FDS6912A_NB5E021A相关器件

型号	品牌	获取价格	描述	数据表
FDS6912A_NB5E028A	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
FDS6912A_NB5E031A	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
FDS6912A_NF40	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
FDS6912A_NL	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 6A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-o
FDS6912AD84Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 6A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-o
FDS6912AL86Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 6A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-o
FDS6912AL99Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 6A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-o
FDS6912A-NB5E0121	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
FDS6912AS62Z	FAIRCHILD	获取价格	Small Signal Field-Effect Transistor, 6A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-o
FDS6912D84Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 6A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Meta

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