是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
Factory Lead Time: | 1 week | 风险等级: | 0.97 |
Samacsys Confidence: | 3 | Samacsys Status: | Released |
Samacsys PartID: | 4423 | Samacsys Pin Count: | 8 |
Samacsys Part Category: | Integrated Circuit | Samacsys Package Category: | Small Outline Packages |
Samacsys Footprint Name: | SO 8L NB (SOIC) | Samacsys Released Date: | 2015-04-16 09:48:08 |
Is Samacsys: | N | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (Abs) (ID): | 5.5 A |
最大漏极电流 (ID): | 5.5 A | 最大漏源导通电阻: | 0.038 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | 最大反馈电容 (Crss): | 60 pF |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 2 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 2 W | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
FDS6910 | ONSEMI |
类似代替 |
双 N 沟道,逻辑电平,PowerTrench® MOSFET,30V,7.5A,17mΩ | |
NTGS5120PT1G | ONSEMI |
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型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDS6930B (KDS6930B) | KEXIN |
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FDS6961AD84Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 3.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal | |
FDS6961AL86Z | FAIRCHILD |
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