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FDS6911

更新时间： 2024-11-21 11:12:15
品牌 Logo 应用领域
安森美 - ONSEMI 开关光电二极管晶体管
页数 文件大小 规格书
8页 305K
描述
双 N 沟道，逻辑电平，PowerTrench® MOSFET，20V，7.5A，13mΩ

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中文翻译

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FDS6911 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G8Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：0.95
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (Abs) (ID)：7.5 A最大漏极电流 (ID)：7.5 A
最大漏源导通电阻：0.013 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G8JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：8工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：1.6 W认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin (Sn)端子形式：GULL WING
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FDS6911 数据手册

 浏览型号FDS6911的Datasheet PDF文件第2页浏览型号FDS6911的Datasheet PDF文件第3页浏览型号FDS6911的Datasheet PDF文件第4页浏览型号FDS6911的Datasheet PDF文件第5页浏览型号FDS6911的Datasheet PDF文件第6页浏览型号FDS6911的Datasheet PDF文件第7页 
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中文翻译

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与FDS6911相关器件

型号 品牌 获取价格 描述 数据表
FDS6911_11 FAIRCHILD

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 		Dual N-Channel Logic Level PowerTrench MOSFET
FDS6912 ONSEMI

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 		双 N 沟道，逻辑电平，PWM 优化，PowerTrench® MOSFET，30V，6A
FDS6912 FAIRCHILD

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 		Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6912_0007 FAIRCHILD

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 		Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6912_NL FAIRCHILD

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 		Power Field-Effect Transistor, 6A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Meta
FDS6912A FAIRCHILD

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 		Dual N-Channel, Logic Level, PowerTrenchTM MOSFET
FDS6912A ONSEMI

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 		双 N 沟道，逻辑电平，PowerTrench® MOSFET，30V，6A，28mΩ
FDS6912A UMW

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 		种类:N+N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°
FDS6912A_03 FAIRCHILD

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 		Dual N-Channel Logic Level PowerTrench MOSFET
FDS6912A_NB5E021A FAIRCHILD

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 		Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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