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FDS6892A PDF预览

FDS6892A

更新时间： 2024-11-21 11:13:23
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲光电二极管晶体管
页数 文件大小 规格书
7页 193K
描述
双N沟道逻辑电平PWM优化PowerTrench® MOSFET

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中文翻译

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FDS6892A 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：SMALL OUTLINE, R-PDSO-G8Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：0.95
配置：SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压：20 V
最大漏极电流 (Abs) (ID)：7.5 A最大漏极电流 (ID)：7.5 A
最大漏源导通电阻：0.018 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-G8JESD-609代码：e3
湿度敏感等级：1元件数量：2
端子数量：8工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：2 W最大脉冲漏极电流 (IDM)：30 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin (Sn)
端子形式：GULL WING端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

FDS6892A 数据手册

 浏览型号FDS6892A的Datasheet PDF文件第2页浏览型号FDS6892A的Datasheet PDF文件第3页浏览型号FDS6892A的Datasheet PDF文件第4页浏览型号FDS6892A的Datasheet PDF文件第5页浏览型号FDS6892A的Datasheet PDF文件第6页浏览型号FDS6892A的Datasheet PDF文件第7页 
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中文翻译

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FDS6892A 替代型号

型号 品牌 替代类型 描述 数据表
FDS6975 ONSEMI

类似代替

 双 P 沟道，逻辑电平，PowerTrench® MOSFET，-30V，-6A，32mΩ
NTMD6N02R2G ONSEMI

类似代替

 Power MOSFET 6.0 Amps, 20 Volts
NTMD4N03R2G ONSEMI

类似代替

 Power MOSFET 4 A, 30 V, N−Channel SO−8 Du

与FDS6892A相关器件

型号 品牌 获取价格 描述 数据表
FDS6892A_NF073 FAIRCHILD

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 		Power Field-Effect Transistor, 7.5A I(D), 20V, 0.018ohm, 2-Element, N-Channel, Silicon, Me
FDS6892A_NF40 FAIRCHILD

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 		Power Field-Effect Transistor, 7.5A I(D), 20V, 0.018ohm, 2-Element, N-Channel, Silicon, Me
FDS6892A_NL FAIRCHILD

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 		Power Field-Effect Transistor, 7.5A I(D), 20V, 0.018ohm, 2-Element, N-Channel, Silicon, Me
FDS6892AZ FAIRCHILD

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 		Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6892AZ_NL FAIRCHILD

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 		Power Field-Effect Transistor, 7.5A I(D), 20V, 0.018ohm, 2-Element, N-Channel, Silicon, Me
FDS6894 FAIRCHILD

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 		Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6894A FAIRCHILD

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 		Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6894A_NL FAIRCHILD

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 		Power Field-Effect Transistor, 8A I(D), 20V, 0.017ohm, 2-Element, N-Channel, Silicon, Meta
FDS6894AZ FAIRCHILD

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 		Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET
FDS6894AZ_NL FAIRCHILD

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 		暂无描述

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