FDS6692_NL

更新时间： 2024-11-20 13:07:47

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体小信号场效应晶体管开关光电二极管
页数	文件大小	规格书
4页	65K
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FDS6692_NL 数据手册

September 2003

FDS6692

30V N-Channel PowerTrench^ÒMOSFET

General Description

Features

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of DC/DC

converters using either synchronous or conventional

switching PWM controllers. It has been optimized for

low gate charge, low R_DS(ON)and fast switching speed.

12 A, 30 V.

R_DS(ON)= 12 mW @ V_GS= 10 V.

R_DS(ON)= 14.5 mW @ V_GS= 4.5 V

High performance trench technology for extremely

low R_DS(ON)

Applications

Low gate charge (18 nC typical)

DC/DC converter

High power and current handling capability

SO-8

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

± 16

V_GSS

Gate-Source Voltage

I_D

Drain Current – Continuous

– Pulsed

(Note 1a)

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

2.5

P_D

1.2

(Note 1c)

1.0

°C

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +175

Thermal Characteristics

R_qJA

R_qJC

°C/W

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Case

(Note 1a)

(Note 1c)

(Note 1)

125

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDS6692

13’’

12mm

2500 units

FDS6692 Rev D (W)

Ó2003 Fairchild Semiconductor Corporation

12 3 4

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FDS6692_NL 替代型号

型号	品牌	替代类型	描述	数据表
FDS6692	FAIRCHILD	功能相似	30V N-Channel PowerTrench MOSFET

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