是否无铅: | 不含铅 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
Factory Lead Time: | 1 week | 风险等级: | 0.96 |
雪崩能效等级(Eas): | 79 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 9 A | 最大漏极电流 (ID): | 9 A |
最大漏源导通电阻: | 0.0115 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e4 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 1.47 W | 最大脉冲漏极电流 (IDM): | 48 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Nickel/Palladium/Gold (Ni/Pd/Au) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FDS6692A_10 | FAIRCHILD |
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N-Channel PowerTrench® MOSFET 30V, 9A, 11.5m | |
FDS6692F011 | FAIRCHILD |
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Small Signal Field-Effect Transistor, 0.012A I(D), 30V, 1-Element, N-Channel, Silicon, Met | |
FDS6692L86Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 0.012A I(D), 30V, 1-Element, N-Channel, Silicon, Met | |
FDS6694 | FAIRCHILD |
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30V N-Channel Fast Switching PowerTrench MOSFET | |
FDS6694_NF073 | FAIRCHILD |
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Small Signal Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal- | |
FDS6694L86Z | FAIRCHILD |
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Small Signal Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal- | |
FDS6699S | FAIRCHILD |
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30V N-Channel PowerTrench SyncFET | |
FDS6699S | ONSEMI |
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N 沟道 PowerTrench® SyncFET™,30V,21A,3.6mΩ | |
FDS6699S_NL | FAIRCHILD |
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Small Signal Field-Effect Transistor, 21A I(D), 30V, 1-Element, N-Channel, Silicon, Metal- | |
FDS6812 | FAIRCHILD |
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Dual N-Channel Logic Level PWM Optimized PowerTrench MOSFET |