Datasheet > FDS6692A_10

FDS6692A_10

更新时间： 2024-09-27 12:23:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
7页	464K
描述
N-Channel PowerTrenchÂ® MOSFET 30V, 9A, 11.5mÎ©

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FDS6692A_10 数据手册

January 2010

FDS6692A

N-Channel PowerTrench^®MOSFET

30V, 9A, 11.5mΩ

Features

General Description

R_DS(ON)= 11.5mΩ, V_GS= 10V, I_D= 9A

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM

controllers. It has been optimized for low gate charge, low

R_DS(ON)= 14.5mΩ, V_GS= 4.5V, I_D= 8.2A

High performance trench technology for extremely low

R_DS(ON)

R_DS(ON)and fast switching speed.

Low gate charge

High power and current handling capability

RoHS Compliant

Applications

DC/DC converters

SO-8

FDS6692A Rev. A2

www.fairchildsemi.com

12 3 4 5 6 7

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