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FDS6690SF011 PDF预览

FDS6690SF011

更新时间: 2024-09-27 14:27:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关光电二极管晶体管
页数 文件大小 规格书
9页 353K
描述
Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

FDS6690SF011 技术参数

生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.12Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):10 A最大漏源导通电阻:0.016 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
元件数量:1端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDS6690SF011 数据手册

 浏览型号FDS6690SF011的Datasheet PDF文件第2页浏览型号FDS6690SF011的Datasheet PDF文件第3页浏览型号FDS6690SF011的Datasheet PDF文件第4页浏览型号FDS6690SF011的Datasheet PDF文件第5页浏览型号FDS6690SF011的Datasheet PDF文件第6页浏览型号FDS6690SF011的Datasheet PDF文件第7页 
September 2000  
FDS6690S  
30V N-Channel PowerTrenchSyncFET™  
General Description  
Features  
The FDS6690S is designed to replace a single SO-8  
MOSFET and Schottky diode in synchronous DC:DC  
power supplies. This 30V MOSFET is designed to  
maximize power conversion efficiency, providing a low  
RDS(ON) and low gate charge. The FDS6690S includes  
an integrated Schottky diode using Fairchild’s  
monolithic SyncFET technology. The performance of  
the FDS6690S as the low-side switch in a synchronous  
rectifier is close to the performance of the FDS6690A in  
parallel with a Schottky diode.  
10 A, 30 V.  
RDS(ON) = 0.016 @ VGS = 10 V  
RDS(ON) = 0.025 @ VGS = 4.5 V  
Includes SyncFET Schottky diode  
Low gate charge (20 nC typical)  
High performance trench technology for extremely low  
RDS(ON)  
Applications  
High power and current handling capability  
DC/DC converter  
Motor drives  
D
D
D
5
6
7
8
4
3
2
1
D
G
S
S
SO-8  
S
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
Drain-Source Voltage  
30  
V
VGSS  
ID  
Gate-Source Voltage  
Drain Current – Continuous  
– Pulsed  
V
A
20  
10  
50  
(Note 1a)  
PD  
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
2.5  
1.2  
1
W
(Note 1c)  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
50  
25  
RθJA  
RθJC  
°C/W  
°C/W  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
FDS6690S  
FDS6690S  
13’’  
12mm  
2500 units  
FDS6690S Rev C(W)  
2000 Fairchild Semiconductor Corporation  

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