Datasheet > IRF8714GPBF

IRF8714GPBF

更新时间： 2024-11-21 01:12:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	254K
描述
Control MOSFET of Sync-Buck Converters used for Notebook Processor Power

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IRF8714GPBF 数据手册

PD - 96263

IRF8714GPbF

Applications

HEXFET^®Power MOSFET

Control MOSFET of Sync-Buck

Converters used for Notebook

ProcessorPower

V_DSS

30V

R_DS(on)max

8.7m @V_GS= 10V

8.1nC

l Control MOSFET for Isolated DC-DC

Converters in Networking Systems

Benefits

l VeryLowGateCharge

l Very Low R_DS(on)at 4.5V V_GS

l Ultra-LowGateImpedance

l FullyCharacterizedAvalancheVoltage

and Current

l 20V V_GSMax. Gate Rating

l 100% tested for Rg

l Lead-Free

SO-8

Top View

l Halogen-Free

Description

The IRF8714GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the

industry standard SO-8 package. The IRF8714GPbF has been optimized for parameters that are

critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction

and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC

converters that power the latest generation of processors for Notebook and Netcom applications.

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Max.

Units

V_DS

Gate-to-Source Voltage

± 20

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

@ T_A= 25°C

@ T_A= 70°C

110

2.5

1.6

@T_A= 25°C

@T_A= 70°C

Power Dissipation

Linear Derating Factor

Operating Junction and

0.02

-55 to + 150

W/°C

°C

Storage Temperature Range

STG

Thermal Resistance

Parameter

Junction-to-Drain Lead

Junction-to-Ambient

Typ.

–––

Max.

Units

R_θJL

R_θJA

°C/W

–––

Notes through ꢀ are on page 9

www.irf.com

07/10/09

12 3 4 5 6 7...9

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