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IRF7413ZUTRPBF PDF预览

IRF7413ZUTRPBF

更新时间: 2024-10-28 21:17:35
品牌 Logo 应用领域
英飞凌 - INFINEON 放大器脉冲光电二极管晶体管
页数 文件大小 规格书
10页 262K
描述
Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8

IRF7413ZUTRPBF 数据手册

 浏览型号IRF7413ZUTRPBF的Datasheet PDF文件第4页浏览型号IRF7413ZUTRPBF的Datasheet PDF文件第5页浏览型号IRF7413ZUTRPBF的Datasheet PDF文件第6页浏览型号IRF7413ZUTRPBF的Datasheet PDF文件第7页浏览型号IRF7413ZUTRPBF的Datasheet PDF文件第9页浏览型号IRF7413ZUTRPBF的Datasheet PDF文件第10页 
IRF7413ZUPbF  
Power MOSFET Selection for Non-Isolated DC/DC Converters  
Synchronous FET  
Control FET  
The power loss equation for Q2 is approximated  
by;  
Special attention has been given to the power losses  
in the switching elements of the circuit - Q1 and Q2.  
Power losses in the high side switch Q1, also called  
the Control FET, are impacted by the Rds(on) of the  
MOSFET, but these conduction losses are only about  
one half of the total losses.  
P = P  
+ P + P*  
loss  
conduction  
drive  
output  
P = Irms 2 × Rds(on)  
loss ( )  
Power losses in the control switch Q1 are given  
by;  
+ Q × V × f  
(
)
g
g
Qoss  
Ploss = Pconduction+ Pswitching+ Pdrive+ Poutput  
+
×V × f + Q × V × f  
(
)
in  
rr  
in  
2  
This can be expanded and approximated by;  
*dissipated primarily in Q1.  
P
= I 2 × Rds(on )  
(
)
loss  
rms  
For the synchronous MOSFET Q2, Rds(on) is an im-  
portant characteristic; however, once again the im-  
portance of gate charge must not be overlooked since  
it impacts three critical areas. Under light load the  
MOSFET must still be turned on and off by the con-  
trol IC so the gate drive losses become much more  
significant. Secondly, the output charge Qoss and re-  
verse recovery charge Qrr both generate losses that  
are transfered to Q1 and increase the dissipation in  
that device. Thirdly, gate charge will impact the  
MOSFETs’ susceptibility to Cdv/dt turn on.  
Qgd  
ig  
Qgs2  
ig  
+ I ×  
× V × f + I ×  
× V × f  
in  
in  
+ Q × V × f  
(
)
g
g
Qoss  
+
×V × f  
in  
2
This simplified loss equation includes the terms Qgs2  
The drain of Q2 is connected to the switching node  
of the converter and therefore sees transitions be-  
tween ground and Vin. As Q1 turns on and off there is  
a rate of change of drain voltage dV/dt which is ca-  
pacitively coupled to the gate of Q2 and can induce  
a voltage spike on the gate that is sufficient to turn  
the MOSFET on, resulting in shoot-through current .  
The ratio of Qgd/Qgs1 must be minimized to reduce the  
potential for Cdv/dt turn on.  
and Qoss which are new to Power MOSFET data sheets.  
Qgs2 is a sub element of traditional gate-source  
charge that is included in all MOSFET data sheets.  
The importance of splitting this gate-source charge  
into two sub elements, Qgs1 and Qgs2, can be seen from  
Fig 16.  
Qgs2 indicates the charge that must be supplied by  
the gate driver between the time that the threshold  
voltage has been reached and the time the drain cur-  
rent rises to Idmax at which time the drain voltage be-  
gins to change. Minimizing Qgs2 is a critical factor in  
reducing switching losses in Q1.  
Qoss is the charge that must be supplied to the out-  
put capacitance of the MOSFET during every switch-  
ing cycle. Figure A shows how Qoss is formed by the  
parallel combination of the voltage dependant (non-  
linear) capacitance’s Cds and Cdg when multiplied by  
the power supply input buss voltage.  
Figure A: Qoss Characteristic  
8
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