是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | SOT | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
针数: | 8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.64 | 雪崩能效等级(Eas): | 32 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 13 A | 最大漏源导通电阻: | 0.01 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 100 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | MATTE TIN |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | AMPLIFIER |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRF7416 | INFINEON |
获取价格 |
Power MOSFET(Vdss=-30V, Rds(on)=0.02ohm) | |
IRF7416PBF | INFINEON |
获取价格 |
HEXFET Power MOSFET | |
IRF7416PBF-1 | INFINEON |
获取价格 |
Power Field-Effect Transistor | |
IRF7416QPBF | INFINEON |
获取价格 |
HEXFET Power MOSFET | |
IRF7416QTRPBF | INFINEON |
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Transistor, | |
IRF7416TR | INFINEON |
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Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Meta | |
IRF7416TR | UMW |
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种类:P-Channel;漏源电压(Vdss):-30V;持续漏极电流(Id)(在25°C | |
IRF7416TRPBF | INFINEON |
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HEXFET® Power MOSFET | |
IRF7416TRPBF-1 | INFINEON |
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Power Field-Effect Transistor, P-Channel, Metal-Oxide Semiconductor FET | |
IRF7418PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 7.6A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Me |