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IPG20N06S2L-50 PDF预览

IPG20N06S2L-50

更新时间: 2024-02-19 06:45:33
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管脉冲光电二极管PC
页数 文件大小 规格书
9页 164K
描述
OptiMOS Power-Transistor

IPG20N06S2L-50 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F5
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.73
Samacsys Confidence:4Samacsys Status:Released
Schematic Symbol:https://componentsearchengine.com/symbol.php?partID=798476PCB Footprint:https://componentsearchengine.com/footprint.php?partID=798476
Samacsys PartID:798476Samacsys Image:https://componentsearchengine.com/Images/9/IPG20N06S2L-50.jpg
Samacsys Thumbnail Image:https://componentsearchengine.com/Thumbnails/1/IPG20N06S2L-50.jpgSamacsys Pin Count:8
Samacsys Part Category:MOSFET (N-Channel)Samacsys Package Category:Other
Samacsys Footprint Name:PG-TDSON-8-4Samacsys Released Date:2020-01-14 09:53:47
Is Samacsys:N其他特性:LOGIC LEVEL COMPATIBLE
雪崩能效等级(Eas):60 mJ外壳连接:DRAIN
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:55 V
最大漏极电流 (Abs) (ID):20 A最大漏极电流 (ID):20 A
最大漏源导通电阻:0.05 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-F5湿度敏感等级:1
元件数量:2端子数量:5
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):51 W
最大脉冲漏极电流 (IDM):80 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

IPG20N06S2L-50 数据手册

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IPG20N06S2L-50  
OptiMOS® Power-Transistor  
Product Summary  
VDS  
55  
50  
20  
V
4)  
m  
A
R DS(on),max  
I D  
Features  
• Dual N-channel Logic Level - Enhancement mode  
PG-TDSON-8-4  
• AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green Product (RoHS compliant)  
• 100% Avalanche tested  
Type  
Package  
Marking  
IPG20N06S2L-50  
PG-TDSON-8-4 2N06L50  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current  
one channel active2)  
T C=25 °C, VGS=10 V1)  
T C=100 °C, VGS=10 V  
I D  
20  
16  
80  
A
Pulsed drain current2)  
one channel active  
I D,pulse  
-
Avalanche energy, single pulse2, 4)  
Avalanche current, single pulse4)  
Gate source voltage  
EAS  
I AS  
I D=10A  
60  
15  
mJ  
A
-
VGS  
-
±20  
V
Power dissipation  
one channel active  
Ptot  
T C=25 °C  
51  
W
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-
-
-55 ... +175  
55/175/56  
°C  
-
Rev. 1.0  
page 1  
2009-09-07  

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