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IPG20N06S415AATMA1 PDF预览

IPG20N06S415AATMA1

更新时间: 2024-11-05 21:16:19
品牌 Logo 应用领域
英飞凌 - INFINEON 脉冲光电二极管晶体管
页数 文件大小 规格书
9页 275K
描述
Power Field-Effect Transistor, 20A I(D), 60V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

IPG20N06S415AATMA1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F8
Reach Compliance Code:not_compliantFactory Lead Time:12 weeks
风险等级:1.71雪崩能效等级(Eas):90 mJ
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):20 A最大漏源导通电阻:0.0155 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-F8
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):80 A
表面贴装:YES端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

IPG20N06S415AATMA1 数据手册

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IPG20N06S4-15A  
OptiMOS-T2 Power-Transistor  
Product Summary  
VDS  
60  
15.5  
20  
V
4)  
RDS(on),max  
mW  
A
ID  
Features  
• Dual N-channel Normal Level - Enhancement mode  
PG-TDSON-8-10  
• AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green Product (RoHS compliant)  
• 100% Avalanche tested  
• Feasible for automatic optical inspection (AOI)  
Type  
Package  
Marking  
4N0615  
IPG20N06S4-15A  
PG-TDSON-8-10  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current  
one channel active  
T C=25 °C, V GS=10 V1)  
I D  
20  
20  
80  
A
T C=100 °C,  
V GS=10 V2)  
Pulsed drain current2)  
one channel active  
I D,pulse  
-
Avalanche energy, single pulse2, 4)  
Avalanche current, single pulse4)  
Gate source voltage  
E AS  
I AS  
I D=10A  
90  
15  
mJ  
A
-
V GS  
-
±20  
V
Power dissipation  
one channel active  
P tot  
T C=25 °C  
50  
W
T j, T stg  
Operating and storage temperature  
-
-55 ... +175  
°C  
Rev. 1.0  
page 1  
2015-09-17  

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