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IPG20N06S4L11ATMA1 PDF预览

IPG20N06S4L11ATMA1

更新时间: 2024-11-20 20:10:47
品牌 Logo 应用领域
英飞凌 - INFINEON 脉冲光电二极管晶体管
页数 文件大小 规格书
9页 157K
描述
Power Field-Effect Transistor, 20A I(D), 60V, 0.0112ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

IPG20N06S4L11ATMA1 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F8Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:1.58
其他特性:LOGIC LEVEL COMPATIBLE雪崩能效等级(Eas):165 mJ
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):20 A最大漏源导通电阻:0.0112 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-F8
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):80 A表面贴装:YES
端子面层:Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

IPG20N06S4L11ATMA1 数据手册

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IPG20N06S4L-11  
OptiMOS-T2 Power-Transistor  
Product Summary  
V DS  
60  
11.2  
20  
V
4)  
mW  
A
R DS(on),max  
I D  
Features  
• Dual N-channel Logic Level - Enhancement mode  
PG-TDSON-8-4  
• AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green Product (RoHS compliant)  
• 100% Avalanche tested  
Type  
Package  
Marking  
IPG20N06S4L-11  
PG-TDSON-8-4 4N06L11  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current  
one channel active  
T C=25 °C, V GS=10 V1)  
I D  
20  
20  
80  
A
T C=100 °C,  
V GS=10 V2)  
Pulsed drain current2)  
one channel active  
I D,pulse  
-
Avalanche energy, single pulse2, 4)  
Avalanche current, single pulse4)  
Gate source voltage  
E AS  
I AS  
I D=10A  
165  
15  
mJ  
A
-
V GS  
-
±16  
V
Power dissipation  
one channel active  
P tot  
T C=25 °C  
65  
W
T j, T stg  
Operating and storage temperature  
-
-55 ... +175  
°C  
Rev. 1.0  
page 1  
2010-10-05  

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