5秒后页面跳转
IPI023NE7N3G PDF预览

IPI023NE7N3G

更新时间: 2024-11-18 11:08:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体栅极晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
10页 462K
描述
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

IPI023NE7N3G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-262AA
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.73Is Samacsys:N
雪崩能效等级(Eas):1100 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:75 V最大漏极电流 (Abs) (ID):120 A
最大漏极电流 (ID):120 A最大漏源导通电阻:0.0023 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-262AA
JESD-30 代码:R-PSIP-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):300 W最大脉冲漏极电流 (IDM):480 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IPI023NE7N3G 数据手册

 浏览型号IPI023NE7N3G的Datasheet PDF文件第2页浏览型号IPI023NE7N3G的Datasheet PDF文件第3页浏览型号IPI023NE7N3G的Datasheet PDF文件第4页浏览型号IPI023NE7N3G的Datasheet PDF文件第5页浏览型号IPI023NE7N3G的Datasheet PDF文件第6页浏览型号IPI023NE7N3G的Datasheet PDF文件第7页 
IPP023NE7N3 G  
IPI023NE7N3 G  
OptiMOSTM3 Power-Transistor  
Product Summary  
Features  
V DS  
75  
2.3  
120  
V
• Optimized technology for synchronous rectification  
• Ideal for high frequency switching and DC/DC converters  
• Excellent gate charge x R DS(on) product (FOM)  
• Very low on-resistance RDS(on)  
R DS(on),max  
I D  
m  
A
• N-channel, normal level  
• 100% avalanche tested  
• Pb-free plating; RoHS compliant, halogen free  
• Qualified according to JEDEC1) for target applications  
Type  
IPP023NE7N3 G  
IPI023NE7N3 G  
Package  
Marking  
PG-TO220-3  
023NE7N  
PG-TO262-3  
023NE7N  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol Conditions  
Unit  
T C=25 °C2)  
I D  
Continuous drain current  
120  
120  
A
T C=100 °C  
Pulsed drain current2)  
I D,pulse  
E AS  
T C=25 °C  
480  
Avalanche energy, single pulse3)  
I D=100 A, R GS=25 Ω  
1100  
mJ  
V
V GS  
Gate source voltage  
±20  
P tot  
T C=25 °C  
Power dissipation  
300  
W
°C  
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-55 ... 175  
55/175/56  
1)J-STD20 and JESD22  
2) See figure 3 for more detailed information  
3) See figure 13 for more detailed information  
Rev. 2.11  
page 1  
2009-11-11  

IPI023NE7N3G 替代型号

型号 品牌 替代类型 描述 数据表
IPP023NE7N3G INFINEON

功能相似

OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

与IPI023NE7N3G相关器件

型号 品牌 获取价格 描述 数据表
IPI024N06N3 G INFINEON

获取价格

OptiMOS ? 60V 是交换模式电源 (SMPS)中的同步整流的理想之选,例如服务器
IPI024N06N3G INFINEON

获取价格

OptiMOS™3 Power-Transistor Features Ideal for
IPI028N08N3G INFINEON

获取价格

OptiMOS®3 Power-Transistor Features Excellent
IPI029N06N INFINEON

获取价格

New OptiMOS™ 40V and 60V
IPI030N10N3G INFINEON

获取价格

OptiMOS3 Power-Transistor
IPI030N10N3GXKSA1 INFINEON

获取价格

Power Field-Effect Transistor, 100A I(D), 100V, 0.003ohm, 1-Element, N-Channel, Silicon, M
IPI032N06N3G INFINEON

获取价格

OptiMOS™3 Power-Transistor Features Ideal for
IPI032N06N3GAKSA1 INFINEON

获取价格

OptiMOS™3 Power-Transistor
IPI034NE7N3G INFINEON

获取价格

OptiMOSTM3 Power-Transistor Features Optimized technology for synchronous rectification
IPI034NE7N3GXK INFINEON

获取价格

Power Field-Effect Transistor, 100A I(D), 75V, 0.0034ohm, 1-Element, N-Channel, Silicon, M