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IPG20N10S4L22ATMA1 PDF预览

IPG20N10S4L22ATMA1

更新时间: 2024-11-18 20:40:03
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 195K
描述
Power Field-Effect Transistor,

IPG20N10S4L22ATMA1 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:1.64JESD-609代码:e3
峰值回流温度(摄氏度):NOT SPECIFIED端子面层:Tin (Sn)
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

IPG20N10S4L22ATMA1 数据手册

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IPG20N10S4L-22  
OptiMOS™-T2 Power-Transistor  
Product Summary  
VDS  
100  
22  
V
4)  
RDS(on),max  
mΩ  
A
ID  
20  
Features  
• Dual N-channel Logic Level - Enhancement mode  
PG-TDSON-8-4  
• AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green Product (RoHS compliant)  
• 100% Avalanche tested  
Type  
Package  
Marking  
IPG20N10S4L-22  
PG-TDSON-8-4 4N10L22  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current  
one channel active1)  
I D  
T C=25°C, VGS=10V  
20  
20  
80  
A
T C=100°C, VGS=10V2)  
Pulsed drain current2)  
one channel active  
I D,pulse  
-
Avalanche energy, single pulse2, 4)  
Avalanche current, single pulse4)  
Gate source voltage  
EAS  
I AS  
I D=10A  
130  
15  
mJ  
A
-
VGS  
-
±16  
V
Power dissipation  
one channel active  
Ptot  
T C=25°C  
60  
W
T j, T stg  
Operating and storage temperature  
-
-55 ... +175  
°C  
Rev. 1.1  
page 1  
2013-01-30  

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