是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PDSO-F3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.63 |
雪崩能效等级(Eas): | 165 mJ | 外壳连接: | DRAIN |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 20 A | 最大漏源导通电阻: | 0.0112 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-F3 |
湿度敏感等级: | 1 | 元件数量: | 2 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 80 A |
参考标准: | AEC-Q101 | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPG20N06S4L-11A_15 | INFINEON |
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Dual N-channel Logic Level - Enhancement mode | |
IPG20N06S4L11ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 60V, 0.0112ohm, 2-Element, N-Channel, Silicon, Me | |
IPG20N06S4L-14 | INFINEON |
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OptiMOS-T2 Power-Transistor | |
IPG20N06S4L-26 | INFINEON |
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OptiMOS-T2 Power-Transistor | |
IPG20N06S4L-26A | INFINEON |
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车规级MOSFET | |
IPG20N06S4L26AATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 60V, 0.026ohm, 2-Element, N-Channel, Silicon, Met | |
IPG20N06S4L26ATMA1 | INFINEON |
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Power Field-Effect Transistor, 20A I(D), 60V, 0.026ohm, 2-Element, N-Channel, Silicon, Met | |
IPG20N10S4-36A | INFINEON |
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Power Field-Effect Transistor, 20A I(D), 100V, 0.036ohm, 2-Element, N-Channel, Silicon, Me | |
IPG20N10S436AATMA1 | INFINEON |
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Power Field-Effect Transistor, 20A I(D), 100V, 0.036ohm, 2-Element, N-Channel, Silicon, Me | |
IPG20N10S4L-22 | INFINEON |
获取价格 |
Power Field-Effect Transistor |