是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-F6 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 26 weeks | 风险等级: | 1.69 |
雪崩能效等级(Eas): | 130 mJ | 外壳连接: | DRAIN |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 20 A | 最大漏源导通电阻: | 0.022 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-F6 |
湿度敏感等级: | 1 | 元件数量: | 2 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 80 A |
参考标准: | AEC-Q101 | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPG20N10S4L22ATMA1 | INFINEON |
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Power Field-Effect Transistor, | |
IPG20N10S4L-35 | INFINEON |
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Power Field-Effect Transistor | |
IPG20N10S4L-35A | INFINEON |
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Power Field-Effect Transistor, 20A I(D), 100V, 0.035ohm, 2-Element, N-Channel, Silicon, Me | |
IPG20N10S4L35ATMA1 | INFINEON |
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Power Field-Effect Transistor, | |
IPI020N06N | INFINEON |
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New OptiMOS⢠40V and 60V | |
IPI023NE7N3G | INFINEON |
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OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) | |
IPI024N06N3 G | INFINEON |
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OptiMOS ? 60V 是交换模式电源 (SMPS)中的同步整流的理想之选,例如服务器 | |
IPI024N06N3G | INFINEON |
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OptiMOS™3 Power-Transistor Features Ideal for | |
IPI028N08N3G | INFINEON |
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OptiMOS®3 Power-Transistor Features Excellent | |
IPI029N06N | INFINEON |
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New OptiMOS⢠40V and 60V |