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IPG20N10S4L22AATMA1 PDF预览

IPG20N10S4L22AATMA1

更新时间: 2024-11-18 21:12:35
品牌 Logo 应用领域
英飞凌 - INFINEON 脉冲光电二极管晶体管
页数 文件大小 规格书
9页 207K
描述
Power Field-Effect Transistor, 20A I(D), 100V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8-10, 8 PIN

IPG20N10S4L22AATMA1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F6
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:26 weeks风险等级:1.69
雪崩能效等级(Eas):130 mJ外壳连接:DRAIN
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):20 A最大漏源导通电阻:0.022 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-F6
湿度敏感等级:1元件数量:2
端子数量:6工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):80 A
参考标准:AEC-Q101表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

IPG20N10S4L22AATMA1 数据手册

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IPG20N10S4L-22A  
OptiMOS™-T2 Power-Transistor  
Product Summary  
VDS  
100  
22  
V
4)  
RDS(on),max  
mΩ  
A
ID  
20  
Features  
• Dual N-channel Logic Level - Enhancement mode  
PG-TDSON-8-10  
• AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green Product (RoHS compliant)  
• 100% Avalanche tested  
• Feasible for automatic optical inspection (AOI)  
Type  
Package  
Marking  
IPG20N10S4L-22A  
PG-TDSON-8-10  
4N10L22  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current  
one channel active1)  
I D  
T C=25°C, VGS=10V  
20  
20  
80  
A
T C=100°C, VGS=10V2)  
Pulsed drain current2)  
one channel active  
I D,pulse  
-
Avalanche energy, single pulse2, 4)  
Avalanche current, single pulse4)  
Gate source voltage  
EAS  
I AS  
I D=10A  
130  
15  
mJ  
A
-
VGS  
-
±16  
V
Power dissipation  
one channel active  
Ptot  
T C=25°C  
60  
W
T j, T stg  
Operating and storage temperature  
-
-55 ... +175  
°C  
Rev. 1.0  
page 1  
2013-03-04  

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