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IPG20N06S4L26ATMA1 PDF预览

IPG20N06S4L26ATMA1

更新时间: 2024-11-05 14:38:07
品牌 Logo 应用领域
英飞凌 - INFINEON 脉冲光电二极管晶体管
页数 文件大小 规格书
9页 147K
描述
Power Field-Effect Transistor, 20A I(D), 60V, 0.026ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

IPG20N06S4L26ATMA1 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-F8Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:1.58
雪崩能效等级(Eas):35 mJ配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):20 A
最大漏源导通电阻:0.026 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-F8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):80 A
参考标准:AEC-Q101表面贴装:YES
端子面层:Tin (Sn)端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管元件材料:SILICONBase Number Matches:1

IPG20N06S4L26ATMA1 数据手册

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IPG20N06S4L-26  
OptiMOS-T2 Power-Transistor  
Product Summary  
V DS  
60  
26  
20  
V
4)  
mW  
A
R DS(on),max  
I D  
Features  
• Dual N-channel Logic Level - Enhancement mode  
PG-TDSON-8-4  
• AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green Product (RoHS compliant)  
• 100% Avalanche tested  
Type  
Package  
Marking  
IPG20N06S4L-26  
PG-TDSON-8-4 4N06L26  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current  
one channel active  
T C=25 °C, V GS=10 V1)  
I D  
20  
18  
80  
A
T C=100 °C,  
V GS=10 V2)  
Pulsed drain current2)  
one channel active  
I D,pulse  
-
Avalanche energy, single pulse2, 4)  
Avalanche current, single pulse4)  
Gate source voltage  
E AS  
I AS  
I D=10A  
35  
15  
mJ  
A
-
V GS  
-
±16  
V
Power dissipation  
one channel active  
P tot  
T C=25 °C  
33  
W
T j, T stg  
Operating and storage temperature  
-
-55 ... +175  
°C  
Rev. 1.0  
page 1  
2010-10-15  

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