IPI040N06N3G

更新时间： 2024-11-18 05:39:23

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体驱动器开关晶体管
页数	文件大小	规格书
11页	479K
描述
OptiMOS™3 Power-Transistor Features for sync. rectification, drives and dc/dc SMPS

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中文翻译

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数据手册
替代型号

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IPI040N06N3G 数据手册

Type

IPB037N06N3 G IPI040N06N3 G

IPP040N06N3 G

OptiMOS^™3 Power-Transistor

Features

Product Summary

V _DS

3.7

R _{DS(on),max (SMD)}

I _D

• for sync. rectification, drives and dc/dc SMPS

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

mΩ

previous engineering

sample codes:

IPP04xN06N

• N-channel, normal level

IPI04xN06N

IPB04xN06N

• Avalanche rated

• Qualified according to JEDEC¹⁾for target applications

• Pb-free plating; RoHS compliant

• Halogen-free according to IEC61249-2-21

Type

IPB037N06N3 G

IPI040N06N3 G

IPP040N06N3 G

Package

Marking

PG-TO263-3

037N06N

PG-TO262-3

040N06N

PG-TO220-3

040N06N

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

T _C=25 °C²⁾

I _D

Continuous drain current

T _C=100 °C

Pulsed drain current³⁾

I _D,pulse

E _AS

T _C=25 °C

360

I _D=90 A, R _GS=25 Ω

Avalanche energy, single pulse

Gate source voltage

165

V _GS

±20

P _tot

T _C=25 °C

Power dissipation

188

°C

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

¹⁾J-STD20 and JESD22

-55 ... 175

55/175/56

²⁾Current is limited by bondwire; with anR _thJC=0.8 K/W the chip is able to carry 162 A.

³⁾See figure 3

⁴⁾Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

Rev. 1.03

page 1

2009-12-17

12 3 4 5 6 7...11

中文翻译

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IPI040N06N3G 替代型号

型号	品牌	替代类型	描述	数据表
IPI040N06N3GXKSA1	INFINEON	功能相似	Power Field-Effect Transistor, 90A I(D), 60V, 0.004ohm, 1-Element, N-Channel, Silicon, Met

与IPI040N06N3G相关器件

型号	品牌	获取价格	描述	数据表
IPI040N06N3GE8174	INFINEON	获取价格	Power Field-Effect Transistor, 90A I(D), 60V, 0.004ohm, 1-Element, N-Channel, Silicon, Met
IPI040N06N3GXKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 90A I(D), 60V, 0.004ohm, 1-Element, N-Channel, Silicon, Met
IPI041N12N3 G	INFINEON	获取价格	120V OptiMOS™ 系列提供业内最低导通电阻和最快开关性能，适用于各种应用，支持实
IPI041N12N3G	INFINEON	获取价格	OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
IPI041N12N3GAKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 120A I(D), 120V, 0.0041ohm, 1-Element, N-Channel, Silicon,
IPI045N10N3 G	INFINEON	获取价格	英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SM
IPI045N10N3G	INFINEON	获取价格	OptiMOS?3 Power-Transistor
IPI04CN10NG	INFINEON	获取价格	OptiMOS™2 Power-Transistor
IPI04CN10NGXKSA1	INFINEON	获取价格	Power Field-Effect Transistor, 100A I(D), 100V, 0.0042ohm, 1-Element, N-Channel, Silicon,
IPI04N03LA	INFINEON	获取价格	OptiMOS 2 Power-Transistor

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