生命周期: | Obsolete | 包装说明: | IN-LINE, R-PSIP-T3 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.84 | 其他特性: | LOGIC LEVEL COMPATIBLE |
雪崩能效等级(Eas): | 165 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 90 A |
最大漏源导通电阻: | 0.0037 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-262AA | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 360 A |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPI037N08N3G | INFINEON |
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OptiMOS3 Power-Transistor | |
IPI03N03LA | INFINEON |
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OptiMOS 2 Power-Transistor | |
IPI040N06N3 G | INFINEON |
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OptiMOS ? 60V 是交换模式电源 (SMPS)中的同步整流的理想之选,例如服务器 | |
IPI040N06N3G | INFINEON |
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OptiMOS™3 Power-Transistor Features for sync. | |
IPI040N06N3GE8174 | INFINEON |
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Power Field-Effect Transistor, 90A I(D), 60V, 0.004ohm, 1-Element, N-Channel, Silicon, Met | |
IPI040N06N3GXKSA1 | INFINEON |
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Power Field-Effect Transistor, 90A I(D), 60V, 0.004ohm, 1-Element, N-Channel, Silicon, Met | |
IPI041N12N3 G | INFINEON |
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120V OptiMOS™ 系列提供业内最低导通电阻和最快开关性能,适用于各种应用,支持实 | |
IPI041N12N3G | INFINEON |
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OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) | |
IPI041N12N3GAKSA1 | INFINEON |
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Power Field-Effect Transistor, 120A I(D), 120V, 0.0041ohm, 1-Element, N-Channel, Silicon, | |
IPI045N10N3 G | INFINEON |
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英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SM |