型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPI024N06N3G | INFINEON |
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OptiMOS™3 Power-Transistor Features Ideal for | |
IPI028N08N3G | INFINEON |
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OptiMOS®3 Power-Transistor Features Excellent | |
IPI029N06N | INFINEON |
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New OptiMOS⢠40V and 60V | |
IPI030N10N3G | INFINEON |
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OptiMOS3 Power-Transistor | |
IPI030N10N3GXKSA1 | INFINEON |
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Power Field-Effect Transistor, 100A I(D), 100V, 0.003ohm, 1-Element, N-Channel, Silicon, M | |
IPI032N06N3G | INFINEON |
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OptiMOS™3 Power-Transistor Features Ideal for | |
IPI032N06N3GAKSA1 | INFINEON |
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OptiMOSâ¢3 Power-Transistor | |
IPI034NE7N3G | INFINEON |
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OptiMOSTM3 Power-Transistor Features Optimized technology for synchronous rectification | |
IPI034NE7N3GXK | INFINEON |
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Power Field-Effect Transistor, 100A I(D), 75V, 0.0034ohm, 1-Element, N-Channel, Silicon, M | |
IPI037N06L3G | INFINEON |
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Power Field-Effect Transistor, 90A I(D), 60V, 0.0037ohm, 1-Element, N-Channel, Silicon, Me |