Datasheet > IPG20N10S4L-22A

IPG20N10S4L-22A

更新时间： 2024-03-12 21:01:40

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	207K
描述
车规级MOSFET

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IPG20N10S4L-22A 数据手册

IPG20N10S4L-22A

OptiMOS™-T2 Power-Transistor

Product Summary

V_DS

100

R_DS(on),max

mΩ

I_D

Features

• Dual N-channel Logic Level - Enhancement mode

PG-TDSON-8-10

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

• Feasible for automatic optical inspection (AOI)

Type

Package

Marking

IPG20N10S4L-22A

PG-TDSON-8-10

4N10L22

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

Continuous drain current

one channel active¹⁾

I _D

T _C=25°C, V_GS=10V

T _C=100°C, V_GS=10V²⁾

Pulsed drain current²⁾

one channel active

I _D,pulse

Avalanche energy, single pulse^{2, 4)}

Avalanche current, single pulse⁴⁾

Gate source voltage

E_AS

I _AS

I _D=10A

130

V_GS

±16

Power dissipation

one channel active

P_tot

T _C=25°C

T _j, T _stg

Operating and storage temperature

-55 ... +175

°C

Rev. 1.0

page 1

2013-03-04

12 3 4 5 6 7...9

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