5秒后页面跳转
IPG20N06S4L-14 PDF预览

IPG20N06S4L-14

更新时间: 2024-11-05 11:08:47
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 158K
描述
OptiMOS-T2 Power-Transistor

IPG20N06S4L-14 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-F8
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.61
其他特性:LOGIC LEVEL COMPATIBLE雪崩能效等级(Eas):90 mJ
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):20 A最大漏极电流 (ID):20 A
最大漏源导通电阻:0.0137 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-F8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):50 W最大脉冲漏极电流 (IDM):80 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
Base Number Matches:1

IPG20N06S4L-14 数据手册

 浏览型号IPG20N06S4L-14的Datasheet PDF文件第2页浏览型号IPG20N06S4L-14的Datasheet PDF文件第3页浏览型号IPG20N06S4L-14的Datasheet PDF文件第4页浏览型号IPG20N06S4L-14的Datasheet PDF文件第5页浏览型号IPG20N06S4L-14的Datasheet PDF文件第6页浏览型号IPG20N06S4L-14的Datasheet PDF文件第7页 
IPG20N06S4L-14  
OptiMOS-T2 Power-Transistor  
Product Summary  
V DS  
60  
13.7  
20  
V
4)  
mW  
A
R DS(on),max  
I D  
Features  
• Dual N-channel Logic Level - Enhancement mode  
PG-TDSON-8-4  
• AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green Product (RoHS compliant)  
• 100% Avalanche tested  
Type  
Package  
Marking  
IPG20N06S4L-14  
PG-TDSON-8-4 4N06L14  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current  
one channel active  
T C=25 °C, V GS=10 V1)  
I D  
20  
20  
80  
A
T C=100 °C,  
V GS=10 V2)  
Pulsed drain current2)  
one channel active  
I D,pulse  
-
Avalanche energy, single pulse2, 4)  
Avalanche current, single pulse4)  
Gate source voltage  
E AS  
I AS  
I D=10A  
90  
15  
mJ  
A
-
V GS  
-
±16  
V
Power dissipation  
one channel active  
P tot  
T C=25 °C  
50  
W
T j, T stg  
Operating and storage temperature  
-
-55 ... +175  
°C  
Rev. 1.0  
page 1  
2010-10-05  

与IPG20N06S4L-14相关器件

型号 品牌 获取价格 描述 数据表
IPG20N06S4L-26 INFINEON

获取价格

OptiMOS-T2 Power-Transistor
IPG20N06S4L-26A INFINEON

获取价格

车规级MOSFET
IPG20N06S4L26AATMA1 INFINEON

获取价格

Power Field-Effect Transistor, 20A I(D), 60V, 0.026ohm, 2-Element, N-Channel, Silicon, Met
IPG20N06S4L26ATMA1 INFINEON

获取价格

Power Field-Effect Transistor, 20A I(D), 60V, 0.026ohm, 2-Element, N-Channel, Silicon, Met
IPG20N10S4-36A INFINEON

获取价格

Power Field-Effect Transistor, 20A I(D), 100V, 0.036ohm, 2-Element, N-Channel, Silicon, Me
IPG20N10S436AATMA1 INFINEON

获取价格

Power Field-Effect Transistor, 20A I(D), 100V, 0.036ohm, 2-Element, N-Channel, Silicon, Me
IPG20N10S4L-22 INFINEON

获取价格

Power Field-Effect Transistor
IPG20N10S4L-22A INFINEON

获取价格

车规级MOSFET
IPG20N10S4L22AATMA1 INFINEON

获取价格

Power Field-Effect Transistor, 20A I(D), 100V, 0.022ohm, 2-Element, N-Channel, Silicon, Me
IPG20N10S4L22ATMA1 INFINEON

获取价格

Power Field-Effect Transistor,