是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | SMALL OUTLINE, R-PDSO-F8 |
针数: | 8 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.61 |
其他特性: | LOGIC LEVEL COMPATIBLE | 雪崩能效等级(Eas): | 90 mJ |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (Abs) (ID): | 20 A | 最大漏极电流 (ID): | 20 A |
最大漏源导通电阻: | 0.0137 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-F8 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 2 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 50 W | 最大脉冲漏极电流 (IDM): | 80 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IPG20N06S4L-26 | INFINEON |
获取价格 |
OptiMOS-T2 Power-Transistor | |
IPG20N06S4L-26A | INFINEON |
获取价格 |
车规级MOSFET | |
IPG20N06S4L26AATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 60V, 0.026ohm, 2-Element, N-Channel, Silicon, Met | |
IPG20N06S4L26ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 60V, 0.026ohm, 2-Element, N-Channel, Silicon, Met | |
IPG20N10S4-36A | INFINEON |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 100V, 0.036ohm, 2-Element, N-Channel, Silicon, Me | |
IPG20N10S436AATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 100V, 0.036ohm, 2-Element, N-Channel, Silicon, Me | |
IPG20N10S4L-22 | INFINEON |
获取价格 |
Power Field-Effect Transistor | |
IPG20N10S4L-22A | INFINEON |
获取价格 |
车规级MOSFET | |
IPG20N10S4L22AATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 20A I(D), 100V, 0.022ohm, 2-Element, N-Channel, Silicon, Me | |
IPG20N10S4L22ATMA1 | INFINEON |
获取价格 |
Power Field-Effect Transistor, |