Datasheet > IPG20N06S4L-11

IPG20N06S4L-11

更新时间： 2024-11-20 11:08:47

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	158K
描述
OptiMOS-T2 Power-Transistor

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中文翻译

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数据手册

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IPG20N06S4L-11 数据手册

IPG20N06S4L-11

OptiMOS™-T2 Power-Transistor

Product Summary

V _DS

11.2

R _DS(on),max

I _D

Features

• Dual N-channel Logic Level - Enhancement mode

PG-TDSON-8-4

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

Type

Package

Marking

IPG20N06S4L-11

PG-TDSON-8-4 4N06L11

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol

Conditions

Unit

Continuous drain current

one channel active

T _C=25 °C, V _GS=10 V¹⁾

I _D

T _C=100 °C,

V _GS=10 V²⁾

Pulsed drain current²⁾

one channel active

I _D,pulse

Avalanche energy, single pulse^{2, 4)}

Avalanche current, single pulse⁴⁾

Gate source voltage

E _AS

I _AS

I _D=10A

165

V _GS

±16

Power dissipation

one channel active

P _tot

T _C=25 °C

T _j, T _stg

Operating and storage temperature

-55 ... +175

°C

Rev. 1.0

page 1

2010-10-05

12 3 4 5 6 7...9

中文翻译

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