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IPG20N06S3L-35 PDF预览

IPG20N06S3L-35

更新时间: 2024-11-20 11:08:47
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管脉冲光电二极管
页数 文件大小 规格书
9页 164K
描述
OptiMOS-T Power-Transistor

IPG20N06S3L-35 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-F6针数:8
Reach Compliance Code:compliantECCN代码:EAR99
Factory Lead Time:1 week风险等级:5.61
Is Samacsys:N其他特性:LOGIC LEVEL COMPATIBLE
雪崩能效等级(Eas):55 mJ外壳连接:DRAIN
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:55 V
最大漏极电流 (ID):20 A最大漏源导通电阻:0.035 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-F6
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:6
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):80 A认证状态:Not Qualified
表面贴装:YES端子面层:MATTE TIN
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管元件材料:SILICON
Base Number Matches:1

IPG20N06S3L-35 数据手册

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IPG20N06S3L-35  
OptiMOS®-T Power-Transistor  
Product Summary  
VDS  
55  
35  
20  
V
5)  
m  
A
R DS(on),max  
I D  
Features  
• Dual N-channel Logic Level - Enhancement mode  
PG-TDSON-8-4  
• AEC Q101 qualified  
• MSL1 up to 260°C peak reflow  
• 175°C operating temperature  
• Green Product (RoHS compliant)  
• 100% Avalanche tested  
Type  
Package  
Marking  
IPG20N06S3L-35  
PG-TDSON-8-4 3N06L35  
Maximum ratings, at T j=25 °C, unless otherwise specified  
Value  
Parameter  
Symbol  
Conditions  
Unit  
Continuous drain current  
one channel active  
T C=25 °C, VGS=10 V1)  
I D  
20  
15.5  
80  
A
T C=100 °C,  
V
-
GS=10 V2)  
Pulsed drain current2)  
one channel active  
I D,pulse  
Avalanche energy, single pulse2, 5)  
Avalanche current, single pulse5)  
Gate source voltage4)  
EAS  
I AS  
I D=10A  
55  
20  
mJ  
A
-
VGS  
-
±16  
V
Power dissipation  
one channel active  
Ptot  
T C=25 °C  
30  
W
T j, T stg  
Operating and storage temperature  
IEC climatic category; DIN IEC 68-1  
-
-
-55 ... +175  
55/175/56  
°C  
-
Rev. 1.0  
page 1  
2008-09-23  

IPG20N06S3L-35 替代型号

型号 品牌 替代类型 描述 数据表
IPG20N06S2L-35 INFINEON

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OptiMOS Power-Transistor

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