是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PDSO-F6 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
Factory Lead Time: | 1 week | 风险等级: | 5.61 |
Is Samacsys: | N | 其他特性: | LOGIC LEVEL COMPATIBLE |
雪崩能效等级(Eas): | 55 mJ | 外壳连接: | DRAIN |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 55 V |
最大漏极电流 (ID): | 20 A | 最大漏源导通电阻: | 0.035 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-F6 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 2 | 端子数量: | 6 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 80 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | MATTE TIN |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IPG20N06S2L-35 | INFINEON |
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